UPDATE - EE Distinguished Speakers Seminar: 2D electronic devices and materials
Event details
| Date | 24.04.2020 |
| Hour | 14:00 › 15:00 |
| Speaker | Andras Kis is an Associate Professor in Electrical Engineering at EPFL, Lausanne. He started research on 2D semiconductors in 2008, after joining EPFL and has made fundamental contributions to the study of the electronic properties of atomically thin TMDCs. His pioneering work on MoS2 transistors was the first demonstration of high-quality device on a 2D semiconductor and has been cited over 10’000 times. Andras Kis is also serving as the editor in chief of the Nature partner journal 2D materials and applications and is a highly cited researcher. Prior to (re)joining EPFL as faculty, Kis was a postdoctoral researcher at UC Berkeley in the group of Alex Zettl. He received his Ph.D. in physics from EPFL in 2003 and received his MSc in physics from the University of Zagreb, Croatia. His major awards include the Latsis prize in 2004, ERC starting grant in 2009 and ERC consolidator grant in 2015, both awarded for research in the area of electrical properties of 2D transition metal dichalcogenides. |
| Location |
Online webinar
|
| Category | Conferences - Seminars |
Abstract: The discovery of graphene marked the start of research in 2D electronic materials which was expanded in new directions with MoS2 and other layered semiconducting materials such as transition metal dichalcogenides (TMDCs). They have a wide range of interesting fundamental properties and potential applications due to a unique combination of atomic scale thickness, direct band gap and high mechanical strength.
I will show here our latest advances in electronics and photonics based on 2D semiconductors. First, I will show the realization of room-temperature excitonic transistors: electrically controlled switches operating on currents of excitons in a solid-state device based on a 2D heterostructure [1]. Our more advanced structures now also offer the way to manipulate the polarization as well as the emission intensity and wavelength in excitonic devices [2] based on quantum metamaterials allowing control of valley (spin) polarized excitons [3].
Finally, I will present our efforts on more conventional electronic devices and circuits, involving integrated transistor and memory elements based on 2D materials [4].
References
[1] A. Ciarrocchi, D. Unuchek, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis. Nature Photonics 13, 131–136 (2019).
[2] D. Unuchek, A. Ciarrocchi, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis. Room-Temperature Electrical Control of Exciton Flux in a van Der Waals Heterostructure. Nature 560, 340–344 (2018).
[3] D. Unuchek, A. Ciarrocchi, A. Avsar, Z. Sun, K. Watanabe, T. Taniguchi, A. Kis. Valley-Polarized Exciton Currents in a van Der Waals Heterostructure. Nature Nanotechnology 14, 1104–1109 (2019); DOI:10.1038/s41565-019-0559-y.
[4] G. M. Marega, Y. Zhao, A. Avsar, Z. Wang, A. Kis. Under review.
Zoom link: https://epfl.zoom.us/j/96012227897?pwd=bG1oL1BpeUFYSFByT21UbEdrcnJWdz09
I will show here our latest advances in electronics and photonics based on 2D semiconductors. First, I will show the realization of room-temperature excitonic transistors: electrically controlled switches operating on currents of excitons in a solid-state device based on a 2D heterostructure [1]. Our more advanced structures now also offer the way to manipulate the polarization as well as the emission intensity and wavelength in excitonic devices [2] based on quantum metamaterials allowing control of valley (spin) polarized excitons [3].
Finally, I will present our efforts on more conventional electronic devices and circuits, involving integrated transistor and memory elements based on 2D materials [4].
References
[1] A. Ciarrocchi, D. Unuchek, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis. Nature Photonics 13, 131–136 (2019).
[2] D. Unuchek, A. Ciarrocchi, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis. Room-Temperature Electrical Control of Exciton Flux in a van Der Waals Heterostructure. Nature 560, 340–344 (2018).
[3] D. Unuchek, A. Ciarrocchi, A. Avsar, Z. Sun, K. Watanabe, T. Taniguchi, A. Kis. Valley-Polarized Exciton Currents in a van Der Waals Heterostructure. Nature Nanotechnology 14, 1104–1109 (2019); DOI:10.1038/s41565-019-0559-y.
[4] G. M. Marega, Y. Zhao, A. Avsar, Z. Wang, A. Kis. Under review.
Zoom link: https://epfl.zoom.us/j/96012227897?pwd=bG1oL1BpeUFYSFByT21UbEdrcnJWdz09
Practical information
- General public
- Free
Organizer
- EE Institute Prof. E. Matioli