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SUMMARY:Field mapping in semiconductor devices by transmission electron mi
 croscopy
DTSTART:20220401T140000
DTEND:20220401T153000
DTSTAMP:20260407T134057Z
UID:bd1b4d21a6e4bd6f34ef383b18c4acc0211820c7d64b64846c6e1514
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr. David Cooper | Université Grenoble Alpes\nThere is a nee
 d to measure the electric\, magnetic and strain fields in semiconductor de
 vices with nm scale resolution. Firstly\, we will present three different 
 TEM-based technqies that can achieve this\,  off-axis electron holography
 \, differential phase contrast and pixellated STEM mapping.  We will then
  show the different techniques applied to different types of samples and d
 iscuss the advantages and disadvantages of each. The studied samples inclu
 de doped semiconductors\, piezoelectric fields in optoelectronics devices 
 and devices for spintronics.  We will conclude the presentation by showin
 g some measurements made on semiconductor devices operated in-situ in the 
 TEM.
LOCATION:MXC 315 https://plan.epfl.ch/?room==MXC%20315 https://epfl.zoom.u
 s/j/2019908135
STATUS:CONFIRMED
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