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SUMMARY:Prof. Dan Fleetwood's Seminar: 75th Anniversary of the Transistor\
 , Moore’s Law\, and Radiation Effects on Microelectronics
DTSTART:20220608T103000
DTEND:20220608T113000
DTSTAMP:20260916T044056Z
UID:f2a24a3c463dcc30c5ad6d510fe4bcb6f9fb8eea60b47b5b4b635429
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Dan Fleetwood\, Landreth Professor of Engineering\, Vand
 erbilt University\, Nashville\, Tennessee\, USA\nAbstract: In 1965\, just 
 18 years after the invention of the transistor\, Gordon Moore postulated t
 hat the number of components in an integrated circuit would double every 1
 -2 years. This trend still holds\, making it one of the longest\, sustaine
 d geometric progressions in the history of the industrialized world\, enab
 ling revolutions in computing and in virtually every aspect of technology 
 that is enabled or enhanced by computing. Transistor dimensions have decre
 ased from tens of microns to ~ 5 nm over this time period. In this present
 ation\, I will offer some personal reflections on the 75th anniversary of 
 the invention of the transistor\, and then discuss how Moore’s Law size 
 and voltage scaling of transistors and integrated circuits have influenced
  transistor architectures and computing capabilities. The effects of Moore
 ’s Law scaling on the vulnerability of microelectronics to ionizing radi
 ation effects in near-Earth space and terrestrial applications will then b
 e discussed in detail for past\, present\, and future generations of highl
 y-scaled integrated circuit technologies.\nBio: Dan Fleetwood received his
  Ph.D. from Purdue University in 1984. He joined Sandia National Laborator
 ies in 1984 as a Member of the Technical Staff. In 1990\, he was named a D
 istinguished Member of the Technical Staff. Dan accepted a position as Pro
 fessor of Electrical Engineering at Vanderbilt University in 1999. From 20
 03-2020 he served as Chairman of Vanderbilt’s Electrical Engineering and
  Computer Science Department. In 2009 he was named Olin H. Landreth Chair 
 in Engineering. Dan is author or co-author of more than 600 publications o
 n radiation effects\, low frequency noise\, and defects in microelectronic
  materials and devices. He received the 2009 IEEE Nuclear and Plasma Scien
 ces Merit Award\, the society’s highest technical honor\, and is a Fello
 w of IEEE\, the American Physical Society\, and the American Association o
 f the Advancement of Science.
LOCATION:MC B1 303 https://plan.epfl.ch/?room==MC%20B1%20303
STATUS:CONFIRMED
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