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SUMMARY:IMX Seminar Series - Superlative spin transport in two-dimensional
  black phosphorus.
DTSTART:20230403T131500
DTEND:20230403T141500
DTSTAMP:20260502T073238Z
UID:cc120330953dfb0a0677baeeeb1620cbcd6e4e2154f486d0257931b2
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Ahmet Avsar\, National University of Singapore\nExploita
 tion of the intrinsic spin of an electron\, spintronics\, facilitates the 
 development of multifunctional and novel devices which could play an impor
 tant role in the Beyond-CMOS era. Two-dimensional (2D) crystals and their 
 van der Waals heterostructures are particularly promising for spintronics 
 device applications due to their unique properties\, including strong resp
 onses to field effect gating and proximity interactions\, which may enable
  new functionalities that are not possible with conventional bulk material
 s [1].\nBlack phosphorus is a particularly promising 2D semiconducting mat
 erial for spintronics research due to its high charge mobilities\, low ato
 mic mass\, and puckered crystalline structure\, which are expected to lead
  to anisotropic spin transport with nanosecond spin-lifetimes. In this sem
 inar\, I will introduce ultra-thin BP as a unique platform for studying ri
 ch spin-dependent physics. Firstly\, I will show that BP supports all elec
 trical spin injection\, transport\, precession and detection up to room te
 mperature [2]. Then\, I will present our recent findings on the impact of 
 the unique crystal structure of BP on its spin dynamics\, revealing strong
  anisotropic spin transport along three orthogonal axes [3-a]. Finally\, I
  will show that we have achieved the longest spin lifetimes and highest sp
 in signals ever measured in a spin channel material by optimising the char
 ge carrier type and concentration in BP using electrostatic gating and pro
 ximity interactions [3-b]. The exceptional spin transport and strong spin-
 lifetime anisotropy we observe in BP add to the growing body of evidence f
 or the potential of 2D materials in functional spin-based device applicati
 ons.\n[1] A. Avsar et al.\, Rev. Mod. Phys. 92\, 021003 (2020)\, J. F. Sie
 rra et al.\, Nat. Nano.\, 16\, 856-868 (2021)\n[2] A. Avsar et al.\, Nat. 
 Phys. 13\, 888-894 (2017)\n[3] a-) L. Cording et al.\, submitted (2022)\, 
 b-) J. Liu et al.\, submitted (2022).\nBio: Dr Ahmet Avsar is an Assistant
  Professor and NRF Fellow in the Department of Material Science and Engine
 ering at the National University of Singapore (NUS). Prior to joining NUS\
 , he was an Assistant Professor of Physics at Newcastle University (UK). H
 e worked as a postdoctoral researcher (EPFL Fellow) at the Ecole Polytechn
 ique Federale de Lausanne between 2016 and 2020 after completing his PhD i
 n Physics at NUS.\nAs an experimental condensed matter physicist specializ
 ed in two-dimensional (2D) materials\, Ahmet Avsar is interested in exploi
 tation of the multiple quantum degrees of freedom (spin\, pseudospin and v
 alley) available to 2D materials in the ultimate atomically thin limit for
  applications in energy-efficient information technologies.
LOCATION:MXF 1 https://plan.epfl.ch/?room==MXF%201
STATUS:CONFIRMED
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