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SUMMARY:IEM Distinguished Lecturers Seminar: Building Tomorrow’s Electro
 nics: From Atoms to Devices
DTSTART:20230428T131500
DTEND:20230428T140000
DTSTAMP:20260527T190242Z
UID:0a7f442518020492aa7c5a6066bcfbfc5ec27adef4d9220fffbb2e17
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Mathieu Luisier\,\nIntegrated Systems Laboratory\,\nETH 
 Zurich\, Switzerland\nThe seminar will take place in ELA 2 and will be sim
 ultaneously broadcasted in the main auditorium in Neuchâtel Campus (MC A
 1 272).\n\nCoffee and cookies will be served at 13:00 before the seminar\
 , in front of the two auditoriums. \n\nAbstract\nMoore’s scaling law ha
 s survived during more than 50 years because the transistor fabrication re
 cipes have been continuously adapted and technology boosters have been gra
 dually introduced. The driving force behind these innovations has always b
 een the intuition of clever researchers who benefited from the support of 
 technology computer aided design (TCAD) tools to verify their predictions.
  These tools have been used in the semiconductor industry since the end of
  the 1970’s\, when the first two-dimensional simulations of CMOS transis
 tors became feasible on a supercomputer. Over the last 40 years\, transist
 ors have undergone tremendous evolutions\, their dimensions being reduced 
 by several orders of magnitude\, while the physical models at the core of 
 commercially available device simulators have remained the same: the elect
 ron behavior is still described by the classical laws of physics. However\
 , it is known that today’s transistors with close to atomic dimensions a
 re strongly affected by quantum mechanical effects\, the most prominent on
 e being the tunnelling of electrons through classically forbidden regions.
 \nTo accurately model nano-devices\, reproduce their characteristics\, and
  predict their performance even before they are fabricated\, a new generat
 ion of advanced TCAD tools is needed. It should rely on atomistic quantum 
 mechanical concepts to properly describe the physics and geometries at pla
 y. In this talk\, the challenges and opportunities of the TCAD research ac
 tivity will be first introduced before presenting our in-house tool and il
 lustrating it with relevant applications.\n\nBio\nSince 2022\, Mathieu Lui
 sier is Full Professor of Computational Nanoelectronics at ETH Zurich\, Sw
 itzerland. He graduated in electrical engineering in 2003 and received his
  PhD in 2007\, both from ETH Zurich. During that time\, he started the dev
 elopment of a state-of-the-art quantum transport simulator called OMEN. Af
 ter a one-year post-doc at ETH\, he joined in 2008 the Network for Computa
 tional Nanotechnology at Purdue University\, USA\, as a research assistant
  professor. In 2011 he returned to ETH Zurich to become Assistant and then
  Associate Professor. His current research interests focus on the modeling
  of nanoscale devices\, such as advanced transistors based on classical se
 miconductors and 2-D materials\, photo-detectors\, non-volatile resistive 
 memory cells\, and quantum computing systems.\n 
LOCATION:ELA 2 https://plan.epfl.ch/?room==ELA%202 https://epfl.zoom.us/j/
 63596420243
STATUS:CONFIRMED
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