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VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:III-V Nitride Semiconductors Deposited At Low Temperature For Phot
 ovoltaic Applications
DTSTART:20230616T170000
DTSTAMP:20260506T082713Z
UID:b09582cbc39fd5b24d3d477efbaed4f72237f16b8bab7bf3f17ecf40
CATEGORIES:Thesis defenses
DESCRIPTION:Jonathan Emanuel THOMET\nThesis Directors: Dr. A. Hessler-Wyse
 r\, Dr N. Würsch\nPhysics doctoral program\nThesis Nr. 10249\n\nTo take 
 part in the public defense\, please contact directly the speaker
LOCATION:MC A1 272 https://plan.epfl.ch/?room==MC%20A1%20272 https://epfl.
 zoom.us/j/69228014886
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR