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SUMMARY:IEM Distinguished Lecturers Seminar: Exotic 2D Lateral Heterostruc
 tures and Optoelectronic Devices
DTSTART:20240531T131500
DTEND:20240531T140000
DTSTAMP:20260502T044503Z
UID:4670b020146763bfefa5c1e9975d1904418e77755fd666579abcbcd4
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Prasana Kumar Sahoo\, Quantum Materials & Device Researc
 h Lab (QMDrL)\, Materials Science Centre\, Indian Institute of Technology 
 Kharagpur\, India\nThe seminar will take place in ELA 1 and will be simult
 aneously broadcasted in Neuchâtel Campus MC B1 273.\n\nCoffee and cooki
 es will be served from 13:00 next to ELA 1.\n\nAbstract\nAtomically thin l
 ayered materials such as graphene and transition metal dichalcogenides (TM
 Ds) have opened a new and rich field with exotic physical properties and e
 xciting potential applications in the “flatland”.1-9 There are enormou
 s possibilities in combining diverse 2D materials for the unique design of
  ultra-smart and flexible optoelectronic devices\, including transistors\,
  light-emitting diodes\, photovoltaics\, photodetectors\, and quantum emit
 ters. Considerable efforts have been devoted to the van der Waals vertical
  hetero-integration of different 2D layered materials. On the other hand\,
  lateral heterostructure can be fabricated only via direct growth. It can 
 offer exciting opportunities for engineering the formation\, confinement\,
  and transport of electrons\, holes\, exciton\, phonon\, and polariton. We
  reported the direct fabrication of seamless\, high-quality TMDs lateral h
 eterostructures and superlattices in the chemical-vapor-deposition process
 \, only changing the reactive gas environment in the presence of water vap
 or.1-5 Our novel approach offers greater flexibility for the continuous gr
 owth of multi-junction TMDs lateral heterostructures/superlattices\, contr
 olled 1D interfaces\, alloying\, and layer numbers. The extent of the spat
 ial modulation of individual TMD domains and their optical and electronic 
 transition characteristics across the heterojunctions are studied in detai
 l. Electrical transport measurements revealed diode behaviour across the 2
 D lateral junctions\, promising for electroluminescence at room temperatur
 e.2-3 Using photon energy-resolved photoconductivity mapping\, long-term c
 arrier accumulation in MoS2-WS2 lateral heterostructures was observed.5 At
  the onset of photo-excitation\, local carrier density was increased by tw
 o orders of magnitude and persisted for up to several days. Temperature-de
 pendent photoluminescence from neutral exciton\, trion\, and defect-bound 
 exciton provides a better understanding of the optical properties of these
  as-grown 2D lateral heterostructures. These studies will further suppleme
 nt the quantitative evaluation of the optical properties of various 2D het
 erostructures to develop more complex and atomically thin superlattices an
 d exotic 2D quantum devices.\n\nFurthermore\, the performance of most 2D h
 eterostructure-based devices falls far below the predicted values owing to
  several intrinsic and extrinsic factors. These significant issues will al
 so be discussed.\n\nReferences:\n\n	P. K. Sahoo et al.\, Nature\, 553\, 63
 –67 (2018) \n	P. K. Sahoo et al.\, ACS Nano 13\, 12372 (2019)\n	F. Nuger
 a et al. Small 2106600\, 1 (2022)\n	Sousa et al. 2D Matererial 8\, 035051 
 (2021)\n	S. Berweger et al. ACS Nano 14\, 14080 (2020)\n	S. Chakraborty et
  al. iScience (2022) \n	C. Stevens et al.\, Nature Comm. 9\, 3720 (2018)\n
 	M. Trushin et al. Phy. Rev. Lett. 125\, 086803 (2020)\n\n\nShort biograph
 y\nProf. P. K. Sahoo\, an assistant professor at the Materials Science Cen
 tre\, IIT Kharagpur\, is an experimental condensed matter physicist with b
 road experience studying different low-dimensional materials. He obtained 
 a Ph.D. in Physics from Homi Bhabha National Institute (HBNI)- a grant-in-
 aided institute of the Department of Atomic Energy\, Govt. of India. He sp
 ent several years at the University of Cambridge\, UK\, the University of 
 South Florida\, USA and the State University of Campinas\, Brazil. Dr. Sah
 oo’s work covered various areas of semiconductors\, including 2D materia
 ls and heterostructures (graphene and beyond)\, group III-V-based semicond
 uctor nanowires\, and sensors. His current research focuses on exploring a
 nd understanding exotic 2D materials and their heterostructures. He exploi
 ts a combination of materials synthesis\, heterostructuring\, spectroscopi
 c characterization\, and device fabrication for physicochemical properties
  assessment\, which has fundamental and a wide range of technological impl
 ications for future optoelectronics and quantum technology.\n 
LOCATION:ELA 1 https://plan.epfl.ch/?room==ELA%201 https://epfl.zoom.us/j/
 67317987786
STATUS:CONFIRMED
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