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SUMMARY:Single-gate tracking behavior in flat-band multilayer graphene dev
 ices
DTSTART:20260624T151500
DTSTAMP:20260916T050842Z
UID:9f6ef461be07792d3a0f999944d37eec6142597986230050793c902f
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Cyprian Lewandowski\, Florida State University and Nat
 ional High Magnetic Field Laboratory\, USA\nAbstract:  \nA central featu
 re of many van der Waals (vdW) materials is the ability to precisely contr
 ol their charge doping\, n\, and electric displacement field\, D\, using t
 op and bottom gates. For devices composed of only a few layers\, it is com
 monly assumed that D causes the layer-by-layer potential to drop linearly 
 across the structure. Here\, we show that this assumption fails for a broa
 d class of crystalline and moiré vdW structures based on Bernal- or rhomb
 ohedral-stacked multilayer graphene. We find that the electronic propertie
 s at the Fermi level are largely dictated by special layer—polarized sta
 tes arising at Bernal-stacked crystal faces\, which typically coexist in t
 he same band with layer-delocalized states.  We uncover a novel mechanism
  by which the layer-delocalized states completely screen the layer-polariz
 ed states from the bias applied to the remote gate. This screening mechani
 sm leads to an unusual scenario where voltages on either gate dope the ban
 d as expected\, yet the band dispersion and associated electronic properti
 es remain primarily (and sometimes exclusively) governed by the gate close
 r to the layer--polarized states. Our results reveal a novel electronic me
 chanism underlying the atypical single-gate–-controlled transport charac
 teristics observed across many flat-band graphitic structures\, and provid
 e key theoretical insights essential for accurately modeling these systems
 .\n 
LOCATION:PH H3 33 https://plan.epfl.ch/?room==PH%20H3%2033 https://epfl.zo
 om.us/j/69823646374?pwd=mYUfXk7hNOyXYh238nfzg8CTbqjaQO.1
STATUS:CONFIRMED
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