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SUMMARY:Active silicon-photonic devices based on hybrid material integrati
 on
DTSTART:20110623T140000
DTSTAMP:20260919T215400Z
UID:7390ece18cf83f05a2adf1381884cf4d5f4f9a0d736c1ed517a82867
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Avinoam Zadok \, Bar-Ilan Uni. \nThe research field of S
 ilicon Photonics pursues the implementation of optical communication and p
 rocessing functionalities\, such as the generation\, modulation\, guiding 
 and detection of light\, within the silicon material platform. The field i
 s driven by the promise of potentially mass-produced\, low-cost devices\, 
 and the possibility of integrating photonics and electronics together on s
 ingle chips. Interest in silicon photonics has increased further in recent
  years\, due to the need to support high-rate communication among parallel
  computer processes. Silicon has several favorable material properties for
  the implementation of passive photonic devices\, such as waveguides and l
 inear filters. On the other hand\, the development of active photonic devi
 ces in silicon is held back by several material drawbacks\, such as an ind
 irect bandgap\, absence of an electro-optic effect\, strong two-photon abs
 orption at telecommunication wavelength and relatively long lifetimes of i
 njected carriers. Nevertheless\, several solution paths have been proposed
  and demonstrated in the realization of silicon-integrated light sources\,
  modulators and telecommunication wavelength detectors. Many such demonstr
 ations rely on hybrid devices\, which bring together silicon and another e
 lectro-optic material of more favorable properties\, such as germanium or 
 InP and GaAs alloys. The primary technological challenge in the fabricatio
 n of such devices has to do with wafer-bonding of the two dissimilar mater
 ials. The talk begins with an introduction to the underlying motivation to
  silicon photonics research\, and the properties of silicon as an optical 
 medium. Several examples of passive silicon photonic devices are provided.
  Next\, emphasis is given to active devices such as light sources\, modula
 tors and detectors\, with examples of hybrid integrated devices by several
  groups. The fabrication and characterization of a hybrid silicon / InP la
 ser diode are described in detail. Lastly\, a new and promising approach t
 o the bonding of dissimilar materials is described\, based on the depositi
 on of self-assembled organic molecular monolayers.
LOCATION:SG 0211 https://plan.epfl.ch/?room==SG%0200211
STATUS:CONFIRMED
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