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SUMMARY:Carbon Nanotube-FET and Interconnection Modeling for Analysis and 
 Design of Emerging Nanoscale Integrated Circuits
DTSTART:20110617T100000
DTSTAMP:20260929T013114Z
UID:29ceb370fa61304575c056cf7cdf8b03c2587d186b35d34122402cc7
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Ashok Srivastava\, Louisiana State University\nCarbon na
 notubes\, discovered in 1991 by Iijima of Japan\, are one-dimensional grap
 hene sheets rolled into a tubular structure of nanometer size. The one-dim
 ensional carbon nanotube (CNT) has excellent electrical\, mechanical and t
 hermal properties which has made the CNT one of the promising materials fo
 r applications in nanoelectronics and micro/nano-systems. Their properties
  depend on the diameter and wrapping angle determined by the chiral vector
  which is characterized by the indices (n\, m) of the graphene. Carbon nan
 otube field effect transistor (CNT-FET) has been identified as one of the 
 promising candidates for future integrated circuits substituting shrinking
  CMOS integrated circuit technology at the end of the Moore’s law. Nanom
 eter CMOS technology especially in 22 nm technology node and below is plag
 ued due to performance degradation of conventional Cu/low-k dielectric as 
 an interconnect material for gigascale integration. In search for novel te
 chnologies\, no such material has aroused so much interest other than carb
 on nanomaterials since the discovery of carbon nanotube. In our recent wor
 k\, we have modeled electronic transport in CNT-FETs\, single-walled carbo
 n nanotubes\, multi-walled carbon nanotubes and single-walled carbon nanot
 ube bundles as interconnects for on-chip integration. We have developed an
 alytical models which can be used in Cadence/AMS mode simulations. In this
  seminar\, I will present modeling equations and results describing the cu
 rrent transport in carbon nanotube field effect transistors and carbon nan
 otube interconnects for use in design of emerging logic devices similar to
  CMOS design style.
LOCATION:ELA 2
STATUS:CONFIRMED
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