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SUMMARY:Interface Bonding\, Reactions and Defect Formation at Semiconducto
 r Interfaces
DTSTART:20110615T123000
DTSTAMP:20260501T155950Z
UID:bb122aaff12366abbfa1edd6590772dace0ae33c617a9df74aa9997d
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Len Brillson\, Ohio State University\, Columbus\nThe for
 mation of barriers to charge transfer at semiconductor interfaces has been
  a focus of considerable research for over fifty years. While early work c
 entered on the intrinsic physical properties of the semiconductor\, ultrah
 igh vacuum surface studies revealed the importance of extrinsic\, interfac
 e-specific effects in understanding the systematic behavior of these Schot
 tky barriers. Without intervening adsorbate layers\, chemical reactions an
 d interdiffusion can occur\, even near room temperature\, which alter the 
 interface region\, introducing new phases\, crystal defects\, and localize
 d electronic states. With the advent of surface science\, new methods have
  emerged to predict and control Schottky barriers at the nanoscale.
LOCATION:CE 4 - Centre midi
STATUS:CONFIRMED
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