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SUMMARY:There's plenty of devices in new flatland
DTSTART:20130430T100000
DTEND:20130430T110000
DTSTAMP:20260427T205752Z
UID:5a2e8b3f4839a916c59dd9df3bc410355b5ea39e088d8ed96a1cde3c
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr Tony Low\, IBM TJ Warson Research Center\, USA\nBio: Tony L
 ow received his Ph.D. degree in Electrical and Computer Engineering from t
 he National University of Singapore in 2008. In 2007\, he was a visiting s
 cientist at the Network for Computational Nanoelectronics at Purdue Univer
 sity\, where he became a post-doctoral research associate in 2008. In 2011
 \, he joined the Nanoscale Science and Technology group at IBM TJ Watson r
 esearch center. His research interests are in the theory and simulations o
 f novel materials and devices for applications in computing\, information 
 and energy. He has contributed extensively to the studies of graphene elec
 tronics\, optoelectronics and plasmonics devices\, and recently on other t
 wo-dimensional transition metal dichalcogenides materials. He had also wor
 ked on conventional semiconductor field effect devices and its spin varian
 ts. He has over 40 scientific publications in peer-reviewed journals\, inc
 luding Nano Letters\, Physical Review Letter\, Nature Nanotechnology\, Nat
 ure Photonics and the IEEE IEDM\, and was also regularly invited to speak 
 at related conferences and universities. His research work has been recogn
 ized with multiple international awards including the Singapore Millennium
  Fellowship and the IEEE Electron Device Society Fellowship. He is also th
 e industry-university liaison to several research programs on novel nanoel
 ectronics devices\, funded by National Science Foundation and the Nanoelec
 tronics Research Initiative.\nThe emergence of new technology is often pre
 ceded by significant advances in materials. Recent discovery of a new clas
 s of two-dimensional (2D) crystals\, with widely diverse electrical\, mech
 anical and optical properties potentially presents such an opportunity. In
  particular\, the well-known semi-metallic graphene\, which possesses uniq
 ue properties such as gate tunability\, high carrier mobility\, wide-band 
 optical absorption and compatibility with silicon processing technologies 
 has already been identified for range of electronic\, optoelectronic and p
 lasmonic applications. In this talk\, I will review our recent efforts in 
 the exploration of these new devices\, drawing upon both theoretical and e
 xperimental studies.\nIn particular\, graphene’s unique hot carrier domi
 nated optoelectronic response at room temperature is unlike other material
 s\, making it ideal for detecting and harvesting of infrared energy from t
 he environment. Recently\, we have made several key advances that brings u
 s closer towards this goal. This includes the understanding and engineerin
 g of basic optoelectronic responses in graphene\, its light-matter interac
 tion\, and the energy cooling pathways of photo-excited carriers. Lastly\,
  I will discuss how the combination of graphene with other 2D materials wo
 uld further widen the possibilities of devices\, and also recent effort in
  this nascent field.
LOCATION:MEB1B10 http://plan.epfl.ch/?room=ME%20B1%20B10
STATUS:CONFIRMED
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