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SUMMARY:Crystalline Silicon Surface Passivation for Silicon Heterojunction
  Solar Cells
DTSTART:20110523T110000
DTSTAMP:20260510T062855Z
UID:028d1ceff8dd2db476213cdb3c2b9618f9e5420fbd63b42a5eb6152d
CATEGORIES:Conferences - Seminars
DESCRIPTION:Jan Willem Schüttauf\, Utrecht University\, Netherlands\nCrys
 talline silicon surface passivation by hydrogenated amorphous silicon (a S
 i:H) deposited by three different chemical vapor deposition (CVD) techniqu
 es at low (T ~ 130°C) temperatures is investigated. For all three techniq
 ues\, surface recombination velocities (SRVs) are reduced by two orders of
  magnitude after prolonged thermal annealing at 200°C. Modeling of our in
 jection level dependent minority carrier lifetime data shows that this red
 uction correlates with a decreased dangling bond density at the amorphous-
 crystalline interface\, indicating that dangling bond saturation is the pr
 edominant mechanism. All three deposition methods yield high quality surfa
 ce passivation. For a-Si:H layers deposited by radio frequency plasma enha
 nced CVD (rf PECVD)\, we obtained outstanding carrier lifetimes of 10.3 ms
  for 50 nm thick films at an injection level of 1015 cm-3\, corresponding 
 to SRVs below 1.32 cm/s [1]. For VHF PECVD (5.4 ms) and HWCVD (3.7 ms) a-S
 i:H layers we also obtained good c-Si surface passivation. \n\n[1] J.W.A. 
 Schüttauf et al.\, Appl. Phys. Lett. 98\, 153514 (2011).  
LOCATION:MT2\, Institut de Microtechnique\, Rue A.-L. Breguet 2\, 2000 Neu
 châtel
STATUS:CONFIRMED
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