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SUMMARY: Power Electronic Devices and Systems based on Bulk GaN Substrates
DTSTART:20130606T140000
DTEND:20130606T150000
DTSTAMP:20260406T210052Z
UID:fe40963c0919e92ca6572bb440e492787fc455d86b24a7d27ac09db8
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr. Isik C. Kizilyalli\, Founder/CTO of Avogy Inc.\nBio: Isik 
 C. Kizilyalli received the B.S.\, M.S. and Ph.D.  (1982\, 1984\, and 1988
 ) degrees from the University of Illinois in Urbana. His doctoral thesis w
 as completed under the supervision of Prof. Karl Hess in the area of compu
 tational semiconductor device physics. His career since spans fundamental 
 research in semiconductors to technology development\, commercialization o
 f innovation\, and entrepreneurship. Currently\, he is the Founder/CTO of 
 Avogy Inc. a venture backed and vertically integrated start-up concerned w
 ith GaN (Gallium Nitride) power electronics\, energy efficiency\, and powe
 r systems. Previously he was with AT&T Bell Laboratories and its spin outs
  Lucent Technologies and Agere systems\, followed by Nitronex Corporation\
 , and solar PV startup Alta Devices where his group holds the world record
  for single junction solar cell conversion efficiency. Dr. Kizilyalli was 
 elected a Fellow of the IEEE for his contributions to Integrated Circuit T
 echnology in 2007. He received the Bell Laboratories’ Distinguished Memb
 er of Technical Staff award in recognition for his contributions to CMOS t
 ransistor design. He has authored or coauthored 100 papers and holds 46 U.
 S. patents.\nAbstract: Fast switching power semiconductor devices are the 
 key to increasing the efficiency and reducing the size of power electronic
  systems.  For the last three decades\, silicon power devices (MOSFETS\, 
 IGBTs\, and diodes) have dominated the power device market.  During this 
 time there have been tremendous improvements in silicon power device perfo
 rmance.  However\, these devices are now approaching the physical materia
 l limits of silicon.  Alternative wide-band gap semiconductor materials\,
  such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a ne
 w generation of power devices that will far exceed the performance of sili
 con-based devices. Wide band-gap semiconductors enable continued improveme
 nt of the efficiency and reduced system size of power electronics.  SiC d
 iodes have already been commercialized and they are increasingly utilized 
 in applications that demand higher efficiency and reliability. However\, t
 here is great interest in developing GaN-based power devices because the f
 undamental material based figure-of-merit of GaN is at least 5X better tha
 n SiC and nearly 1000X over Si.\nThis presentation will provide an introdu
 ction to power electronics. Subsequently\, the power-device figure-of-meri
 t governed by the physical properties of the semiconductor material will b
 e derived for Si\, SiC\, and GaN.  It will be demonstrated that the full 
 potential of the GaN material system can be realized by fabricating vertic
 al devices growing epitaxial GaN layers on bulk GaN substrates by MOCVD (m
 etal organic chemical vapor deposition). Published results from Si and SiC
  devices along with lateral (horizontal) GaN power devices fabricated on S
 iC or silicon substrates are compared with the True GaN™ approach.  Wor
 ld record device performance results will be shown for devices with breakd
 own voltages of 600 to 2600 V and current levels approaching 100 A. Temper
 ature characterization data\, switching behavior in a boost circuit\, and 
 results from reliability testing will prove that applications such as serv
 er farms\, inverters for solar and wind\, solid state lighting\, motor dri
 ves\, and hybrid/electric vehicles will all benefit from the development o
 f devices based on bulk GaN substrates. \nThe development of the GaN powe
 r ecosystem also requires innovation in the design of novel power circuit 
 topologies\, controller ICs\, driver circuits\, power modules\, and low lo
 ss passives (capacitors and magnetics) aside from the GaN device technolog
 y. To this end\, several enabling concepts will be put forth.
LOCATION:CM 1120 http://plan.epfl.ch/?lang=fr&room=CM+1120
STATUS:CONFIRMED
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