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SUMMARY:Structural\, electronic and transport properties of amorphous/crys
 talline silicon heterojunctions
DTSTART:20110527T110000
DTSTAMP:20260407T131757Z
UID:f4714fbfabed187b34d7c28d68289111e55d8ceb13b5002ec58512a9
CATEGORIES:Conferences - Seminars
DESCRIPTION:Tim F. Schulze\, Helmholtz-Zentrum Berlin\nDespite the widespr
 ead application in diodes and solar cells\, fundamental aspects concerning
  the physics of a-Si:H/c-Si heterojunctions remain under dispute. In the p
 resent work\, the microscopic properties of thin undoped a-Si:H layers (co
 mmonly employed as buffer layers in high-efficiency solar cells) are linke
 d with the resulting behaviour of the heterojunction. Thus\, insight is ga
 ined in the dependence of heterojunction band lineup\, c-Si surface passiv
 ation\, electronic transport and ultimately solar cell performance on the 
 structural and electronic properties of the thin a-Si:H layers.
LOCATION:MT2\, IMT\, Breguet 2\, 2000 Neuchâtel
STATUS:CONFIRMED
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