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SUMMARY:Single-layer MoS2 - 2D semiconductors beyond graphene
DTSTART;VALUE=DATE:20130705
DTSTAMP:20260406T232545Z
UID:eede3c84ebe0310fa892d2fd9ba345e1402c350e704ad59898e05c90
CATEGORIES:Conferences - Seminars
DESCRIPTION:Andras Kis\, Nanoscale Electronics and Structures (LANES) - EP
 FL\nAfter quantum dots\, nanotubes and nanowires\, two-dimensional materia
 ls in the shape of sheets with atomic-scale thickness represent the newest
  addition to the diverse family of nanoscale materials . Single-layer moly
 bdenum disulphide (MoS2)\, a direct-gap semiconductor is a typical example
  of new graphene-like materials that can be produced using the adhesive-ta
 pe based cleavage technique originally developed for graphene. The presenc
 e of a band gap in MoS2 allowed us to fabricate transistors that can be tu
 rned off and operate with negligible leakage currents [1]. Furthermore\, o
 ur transistors can be used to build simple integrated circuits capable of 
 performing logic operations and amplifying small signals [2] [3].\nI will 
 report here on high-performance 2D MoS2 transistors with increased current
 s and transconductance due to enhanced electrostatic control [4]. Our devi
 ces also show current saturation for the first time in a 2D semiconductor.
  Electrical breakdown measurements of our devices show that MoS2 can suppo
 rt very high current densities\, exceeding the current carrying capacity o
 f copper by a factor of fifty. We have also successfully integrated graphe
 ne with MoS2 into heterostructures to form flash memory cells [5]. Next\, 
 I will show optoelectronic devices based on MoS2 that have a responsivity 
 surpassing that of similar graphene devices by six orders of magnitude [6]
 .  Finally\, I will present temperature-dependent electrical transport an
 d mobility measurements that show clear mobility enhancement due to the su
 ppression of the influence of charge impurities with the deposition of an 
 HfO2 capping layer [7] and metal-insulator transition in monolayer MoS2.\n
 References\n[1] Q. H. Wang et al.\, Nature Nanotech. 2012\, 7\, 699.\n[2] 
 B. Radisavljevic et al.\, Nature Nanotech. 2011\, 6\, 147.\n[3] B. Radisav
 ljevic\, M. B. Whitwick and A. Kis\, ACS Nano\, 2011\, 5\, 9934.\n[4] B. R
 adisavljevic\, M. B. Whitwick and A. Kis\, Appl. Phys. Lett. 2012\, 101\, 
 043103.\n[5] D. Lembke and A. Kis\, ACS Nano 2012\, 6\, 10070.\n[6] S. Ber
 tolazzi\, D. Krasnozhon and A. Kis\, ACS Nano 2013\, 7\, 3246-3252.\n[7] O
 . Lopez-Sanchez et al.\, Nature Nanotech. 2013\, doi: 10.1038/nnano.2013.1
 00.\n[8] B. Radisavljevic and A. Kis\, Nature Materials 2013\, doi: 10.103
 8/NMAT3687.
LOCATION:PH L1 503 http://plan.epfl.ch/?room=PHL1503
STATUS:CONFIRMED
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