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VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Integration of Engineered Source and Drain Extensions in Double Ga
 te Mosfet with Sub-32nm Channel Length
DTSTART:20110317T180000
DTSTAMP:20260415T191150Z
UID:af889e2a223bac444283abddff92b5c44f2b98cb73771f756f658f7f
CATEGORIES:Thesis defenses
DESCRIPTION:Madame Jyotshna Bhandari\nDirecteur de thèse: prof. Mihai Adr
 ian Ionescu et Dr Maud Vinet\nMicrotechnique
LOCATION:ELA2
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR