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SUMMARY:The Extension of CMOS Technology Beyond 14 nm Node
DTSTART:20131115T141500
DTSTAMP:20260530T212619Z
UID:3a49686c5db88ed37e328c003df4ccb3bf3d65bd8db6717234ec378f
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr. Christophe P. Rossel\, IBM Research-Zurich\, Rüschlikon\n
 The advances in Si technology have been the backbone of a tremendous growt
 h in the semiconductor industry as described by Moore's law. As there are 
 ultimate limits to transistor scaling\, new materials and innovative conce
 pts are needed to extend CMOS technology as far as possible and even beyon
 d traditional schemes. One goal at IBM Zurich in the field of advanced fun
 ction materials is the development of high-mobility channel MOSFETs based 
 on III-V materials such as InGaAs with advanced gate stack using high-k di
 electrics\, and their co- integration on Si wafers. The different material
 s and integration issues and solutions will be reviewed.
LOCATION:PH L1 503 http://plan.epfl.ch/?room=PHL1503
STATUS:CONFIRMED
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