BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Effect of Work-Function Engineering of p+/TCO interface on the Per
 formance of a-Si:H Solar Cells
DTSTART:20110131T100000
DTSTAMP:20260501T141642Z
UID:108d146aecaba5aaf66cb9175f158689b5b29ca3c7f34fe03b8a5342
CATEGORIES:Conferences - Seminars
DESCRIPTION:Jeehwan Kim\, Ph.D\, IBM T.J. Watson Research Center\nABSTRACT
 \nAddition of carbon into p-type “window” layers in amorphous Si solar
  cells enhances short circuit currents and open circuit voltages by a grea
 t deal. However\, amorphous Si solar cells with high carbon-doped “windo
 w” layers exhibit poor fill factors due to a Schottky barrier-like imped
 ance at the interface between a-SiC:H windows and transparent conducting o
 xides (TCO)\, although they show maximized short circuit currents and open
  circuit voltages. The impedance is caused by an increasing mismatch betwe
 en the work function of TCO and that of p-type aSiC:H. Applying ultrathin 
 high work-function metals at the interface between the two materials resul
 ts in an effective lowering of the work function mismatch and a consequent
  ohmic behavior. If the metal layer is sufficiently thin\, it forms nanodo
 ts rather than a continuous layer which provides light scattering. Signifi
 cant efficiency enhancement was demonstrated by using high work-function m
 aterials for engineering the work-function at the key interfaces to raise 
 fill factors as well as photocurrents.
LOCATION:MT2\, rue A.-L. Breguet 2\, Neuchâtel
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR