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SUMMARY:Semiconductor Nanowires – From Materials to Devices 
DTSTART:20140505T131500
DTEND:20140505T141500
DTSTAMP:20260415T235736Z
UID:3108fe68bcc8d3522a43c14b27adfba69d7f3bb8a3201f35f57785e2
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Heike Riel\, IBM Zurich Research Laboratory\nSemiconduct
 ing Nanowires have developed into a platform for nanoscience and nanotechn
 ology attractive for a plethora of applications ranging from electronics t
 o optoelectronics\, including various types of sensors\, and also energy h
 arvesting devices such as e.g. solar cells and thermoelectric devices.\nAp
 proaching fundamental limits in scaling-down conventional silicon microele
 ctronic devices forces the semiconductor industry to research and develop 
 novel materials and device geometries. In that regard bottom-up grown nano
 wires are very attractive materials for direct integration of III-V semico
 nductors on silicon thus opening up new possibilities for the design and f
 abrication of electronic and optoelectronic devices. The ability to epitax
 ially grow abrupt axial heterostructures with large lattice mismatch is un
 ique for the nanowire geometry\, and together with the possibility of in-s
 itu doping and core-shell structures provides the basis for novel device c
 oncepts.\nIn this talk I will give an overview about our activities in the
  field of semiconducting nanowires for electronic\, optoelectronic and the
 rmoelectric application. I will briefly review our work on III-V nanowire 
 growth including doping and material characterization\, demonstrating the 
 opportunities of the nanowire approach. In addition\, device fabrication\,
  electrical\, optical and thermo-electrical characterization of nanowire-b
 ased devices will be discussed.\nBio: Heike Riel is IBM Fellow and the Man
 ager of the Nanoscale Electronics Group at\nIBM Research – Zurich. She i
 s responsible for projects in the area of\nsemiconducting nanowires for ap
 plications in electronics\, optoelectronics and\nenergy harvesting and mol
 ecular electronics. Her research focuses on new\nmaterials and novel devic
 e concepts for future nanoelectronics in particular steep\nslope devices f
 or energy efficient computation.\nHeike Riel studied physics at the Univer
 sity of Friedrich-Alexander Erlangen-\nNuremberg (Germany) and received a 
 PhD from the University of Bayreuth\n(Germany) in 2003 for her work on the
  optimization of multilayer organic lightemitting\ndevices. After an inter
 nship at the Hewlett-Packard Research Laboratory\,\nPalo Alto\, she joined
  the IBM Zurich Research Lab in 1998 as a PhD student\, and\nbecame a Rese
 arch Staff Member in 2003. Since 2008 she has been leading the\nNanoscale 
 Electronics Group and in 2013 she became IBM Fellow. In 2011 Heike\nhas gr
 aduated with an MBA from Henley Business school.\nHeike Riel made major co
 ntributions to the development of the\, at that time\,\nworld’s largest 
 ever (20”) full-color amorphous-silicon active-matrix display\nbased on 
 organic light-emitting diodes\, which was presented in May 2003. For\nher 
 outstanding scientific contributions Heike was elected by Technology Revie
 w\,\nMIT’s Magazine of Innovation\, to the TR100\, the annual list of th
 e world’s 100\nTop Young Innovators in September 2003 and she received t
 he 2005 Applied\nPhysics Award of the Swiss Physical Society. In June 2012
  Heike Riel received\nthe award in the category “Technical or Scientific
  Innovation” which was awarded\nby the Swiss Association of Women in Eng
 ineering (SVIN) on the occasion of\ntheir 20th anniversary.
LOCATION:MXF 1 https://plan.epfl.ch/?room==MXF%201
STATUS:CONFIRMED
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