BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Emerging Electronic Devices for Energy Efficient Computing
DTSTART;VALUE=DATE:20140221
DTSTAMP:20260407T113235Z
UID:a73ae973a32230f2767ea96b0827799b88642be789905561a22137f9
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Adrian M. Ionescu\, Nanolab\, Ecole Polytechnique Fédé
 rale de Lausanne\nThis seminar will review state-of-the-art energy efficie
 nt computing device principles (Band-To-Band-Tunneling - BTBT\, Negative C
 apacitance\, Nano-Electro-Mechanical - NEM switching) and performances\, w
 ith main emphasis on tunnel FETs.  At device level we will discuss some o
 f the important challenges for tunnel FETs such as: (i) selection of the m
 aterial system and band-gap engineering of heterostructure Tunnel FETs to 
 simultaneously offer best performance trade-off for operation below 0.3V\,
  (ii) optimized device design (field aligned to the tunneling path\, super
 -linear onset\, minimization of Miller effect)\, (iii) understanding the r
 ole of defects for efficient BTBT\, (iv) controlling parameter sensitivity
  and variability\, and\, (v) advanced modeling of heterojunction tunnel FE
 Ts.\nA future Density-of-State switch candidate for sub-0.1V operation exp
 loiting tunneling through a bias-induced electron-hole bilayer (called Ele
 ctron-Hole Bilayer Tunnel FET) will be investigated and discussed based on
  a calibrated quantum-mechanical simulator. We will present performance pr
 ojections for sub-0.3V EHBTFET complementary logic compared to CMOS logic.
 \nOverall\, the paper will demonstrate that Tunnel FETs stand as the most 
 promising steep slope switch candidates to reduce the supply voltage below
  0.3 V and offer significant power dissipation savings for digital computi
 ng.\nBio: Adrian M. Ionescu is Full Professor at the Swiss Federal Institu
 te of Technology\, Lausanne\, Switzerland. He received the B.S./M.S. and P
 h.D. degrees from the Polytechnic Institute of Bucharest\, Romania and the
  National Polytechnic Institute of Grenoble\, France\, in 1989 and 1997\, 
 respectively. He has held staff and/or visiting positions at LETI-CEA\, Gr
 enoble\, France and INP Grenoble\, France and Stanford University\, USA\, 
 in 1998 and 1999.\nDr. Ionescu has published more than 400 articles in int
 ernational journals and conferences. He received many Best Paper Awards in
  international conferences\, the Annual Award of the Technical Section of 
 the Romanian Academy of Sciences in 1994 and the Blondel Medal in 2009 for
  remarkable contributions to the progress in engineering sciences in the d
 omain of electronics. He is the 2013 recipient of the IBM Faculty Award in
  Engineering. He served the IEDM and VLSI conference technical committees 
 and was the Technical Program Committee (Co)Chair of ESSDERC in 2006 and 2
 013.\nHe is director of the Laboratory of Micro/Nanoelectronic Devices (NA
 NOLAB). He is appointed as national representative of Switzerland for the 
 European Nanoelectronics Initiative Advisory Council (ENIAC) and member of
  the Scientific Committee of CATRENE. Dr. Ionescu is the European Chapter 
 Chair of the ITRS Emerging Research Devices Working Group.
LOCATION:PH L1 503 http://plan.epfl.ch/?room=PHL1503
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR