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SUMMARY:Power Electronic Devices Enabled by Bulk GaN Substrates
DTSTART:20140515T140000
DTEND:20140515T150000
DTSTAMP:20260407T105404Z
UID:1d853cd56c8673a4cb17955c1d521809115c59b337148cb105d1bcd2
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr. Isik C. Kizilyalli\, Founder/CTO of Avogy Inc.\nBio: Isik 
 C. Kizilyalli received the B.S.\, M.S. and Ph.D.  (1982\, 1984\, and 1988
 ) degrees from the University of Illinois in Urbana. His doctoral thesis w
 as completed under the supervision of Prof. Karl Hess in the area of compu
 tational semiconductor device physics. His career since spans fundamental 
 research in semiconductors to technology development\, and commercializati
 on of innovation. He is the founder of Avogy Inc.\, a venture backed start
 -up concerned with power electronics\, energy efficiency\, and smart grid 
 technologies where he has held the positions of  CEO and currently CTO. P
 reviously he was with AT&T Bell Laboratories and its spin outs Lucent Tech
 nologies and Agere systems\, followed by Nitronex Corporation\, and solar 
 PV startup Alta Devices. Dr. Kizilyalli was elected a Fellow of the IEEE f
 or his contributions to Integrated Circuit Technology. He received the Bel
 l Laboratories’ Distinguished Member of Technical Staff award in recogni
 tion for his contributions to CMOS transistor design. Dr. Kizilyalli and h
 is team have received the Best Paper Award at IEEE International Conferenc
 e on Power Semiconductors and ICs (ISPSD) in 2013. He has authored or coau
 thored 100 papers and holds 53 U.S. patents.\nAbstract:\nFast switching po
 wer semiconductor devices are the key to increasing the efficiency and red
 ucing the size of power electronic systems.  For the last three decades\,
  silicon power devices (MOSFETS\, IGBTs\, and diodes) have dominated the p
 ower device market.  During this time there have been tremendous improvem
 ents in silicon power device performance.  However\, these devices are no
 w approaching the physical limits of silicon.  Alternative wide-band gap 
 semiconductor materials\, such as silicon carbide (SiC) and gallium nitrid
 e (GaN) are enabling a new generation of power devices that will far excee
 d the performance of silicon-based devices. Wide band-gap semiconductors e
 nable continued improvement of the efficiency and reduced system size of p
 ower electronics.  SiC diodes have already been commercialized and they a
 re increasingly utilized in applications that demand higher efficiency and
  reliability. However\, there is great interest in developing GaN-based po
 wer devices because the fundamental material based figure-of-merit of GaN 
 is at least 5X better than SiC and more than 100X over Si.\nThis presentat
 ion will provide an introduction to power electronics. Subsequently\, the 
 power-device figure-of-merit governed by the physical properties of the se
 miconductor material will be derived for Si\, SiC\, and GaN.  It will be 
 demonstrated that the full potential of the GaN material system can be rea
 lized by fabricating vertical devices growing low defect density epitaxial
  GaN layers on bulk GaN substrates. Published results from Si and SiC devi
 ces along with lateral (horizontal) GaN power devices fabricated on SiC or
  silicon substrates are compared with the True GaN™ approach. World reco
 rd device performance results will be shown for p-n diode devices with bre
 akdown voltages of 600 to 4000 V aided by a novel edge termination techniq
 ue. By area scaling and properly thinning the substrates diode currents ap
 proach 400A. A 3A 1.5kV normally-off vertical transistor structure fabrica
 ted on bulk GaN substrates is also introduced. Fundamental GaN material pa
 rameters such as electron mobility and impact ionization rates can be extr
 acted from the devices fabricated. Temperature characterization data\, swi
 tching behavior in a boost circuit\, and results from reliability testing 
 will prove that applications such as server farms\, inverters for solar an
 d wind\, motor drives\, and hybrid/electric vehicles will all benefit from
  this newly emerging field of power semiconductor devices enabled by bulk 
 GaN substrates.
LOCATION:BC 01 https://plan.epfl.ch/?room==BC%2001
STATUS:CONFIRMED
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