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SUMMARY:Understanding Specifics of the Wafer-level S-parameter System Cali
 bration
DTSTART:20140625T140000
DTEND:20140625T150000
DTSTAMP:20260929T061136Z
UID:82e8dd8528cd54f38034c4618dabc6a8af0d4cadeacb4a7280123a5d
CATEGORIES:Conferences - Seminars
DESCRIPTION:Andrej Rumiantsev\, Electrical Engineering\, Brandenburg Unive
 rsity of Technology BTU Cottbus\, Germany\nBio: Andrej Rumiantsev was born
  in Minsk\, Belarus in 1972. He received the Diploma-Engineer degree (with
  highest honors) in Telecommunication systems from the Belarusian State Un
 iversity of Informatics and Radio Electronics (BSUIR)\, Minsk\, Belarus\, 
 and the Dr.-Ing. Degree (with summa cum laude) in Electrical Engineering f
 rom Brandenburg University of Technology (BTU) Cottbus\, Germany\, in 1994
  and 2014\, respectively.\nFrom 1997 to 2001\, he was a research and teach
 ing assistant in the Department of Telecommunication Systems at the BSUIR.
  From 2001 to 2013\, he has been employed at SUSS MicroTec Test Systems (f
 rom January 2010 Cascade Microtech) at various engineering and engineering
  management positions. He significantly contributed to the development of 
 the SUSS’ RF wafer probe\, the |Z| Probe\, wafer-level calibration stand
 ards\, calibration software and probe systems. At Cascade Microtech\, he h
 eld the position of Product Marketing Manager of Device Characterization f
 or Modeling and Process Development. From March 2013\, he is with Ulrich L
 . Rohde Chair for RF and Microwave Techniques at Brandenburg University of
  Technologies (BTU)\, Cottbus\, Germany. His research interests include RF
  calibration and wafer-level measurement techniques for advanced semicondu
 ctor devices.\nDr. Rumiantsev is a member of the IEEE MTT-S\, ARFTG from 2
 004 as well as the IEEE MTT-11 Microwave Measurements Committee. He serves
  as the Chair of the Modeling and Simulation Sub-Committee of IEEE Bipolar
 /BiCMOS Circuits and Technology Meeting (BCTM). He is an active publishing
  author and reviewer at various MTT-S conferences and journals. He holds s
 everal patents in the area of wafer-level RF calibration and measurements 
 techniques. Dr. Rumiantsev received the ARFTG-71th Best Interactive Forum 
 Paper Award.\nA quick guide on how to achieve accurate and confident measu
 rement results of planar devices at the mm-wave frequency range and beyond
 .\nWafer-level S-parameter measurement at mm-wave and sub-mm wave frequenc
 ies plays a crucial role in the model development and IC design verificati
 on and debug of advanced semiconductor technologies. Accurate calibration 
 of the entire wafer-level measurement system to the RF probe tip end or to
  the intrinsic device terminals is a critical success factor for extractin
 g trustable device model parameters and characterizing true performance of
  a RF IC.\nNowadays\, various RF calibration methods are available and use
 d at the wafer-level. This talk will start with exploring the basics of th
 e S-parameter calibration techniques. Special attention will be given to t
 he generalised calibration theory as well as to choosing the right calibra
 tion method for specific measurement application needs. Definition of the 
 calibration reference plane and the measurement reference impedance of a c
 alibrated system will be reviewed as well. Finally\, the potential sources
  of calibration residua errors will be analyzed and some practical example
 s will be given on how to minimize the impact of such errors on the measur
 ement accuracy of a calibrated probe system.
LOCATION:DIA 003 http://plan.epfl.ch/?lang=fr&room=DIA+003
STATUS:CONFIRMED
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