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SUMMARY:III-V nanowires: how do they grow and which heterostructures can b
 e realized
DTSTART:20100922T140000
DTSTAMP:20260427T221239Z
UID:dbd09de57d687966747c6e0117f30b0936e2ebe9899b7ff825517e83
CATEGORIES:Conferences - Seminars
DESCRIPTION:Mr Jean-Christophe Harmand \nIn this presentation\, I will fir
 st describe some mechanisms involved in the formation of III-V nanowires (
 NWs)\, with a particular focus on the case of Au catalyst-assisted molecul
 ar beam epitaxy. Our conditions lead to the well-known vapour-liquid-solid
  growth mode. \nI will present a method providing detailed information on 
 the growth kinetics of individual NWs. It appears that the vapour flux int
 ercepted by the NW sidewalls is the dominant contribution to their elongat
 ion. The same method gives access to the statistics of nucleation at the c
 atalyst drop/NW interface. We find that nucleation events are anti-correla
 ted in time. This beneficial effect (it regulates growth) is due to the ra
 pid depletion of the catalyst droplet in group V atoms upon forming each n
 ew NW monolayer. \n Then\, the challenging fabrication of complex and well
 -controlled heterostructures inside NWs will be discussed. Two experimenta
 l examples will be presented in details: (i) vertical AlGaAs/GaAs core-she
 ll NWs buried into a GaAs matrix\, which are very attractive to explore th
 e 1D electronic transport\; (ii) InP/InAs(P) axial heterostructures to for
 m quantum dots (QDs) in free-standing  photonic wires\, a promising system
  to fabricate single photon sources.
LOCATION:MXF-1
STATUS:CONFIRMED
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