BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Advanced crystalline silicon solar cell processing and characteriz
 ation
DTSTART:20100616T090000
DTSTAMP:20260407T051020Z
UID:4828a9853db59c30b34fe601c21e726e57a2c6da659bf17dc5a1e8ed
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr Sara Olibet\, 1366 Technologies Inc. MIT start-up\, Boston\
 nWith over 10 GW manufacturing of crystalline Si cells (c-Si) in 2009 and 
 an expected manufacturing capacity well over 20 GW by the end of 2010\, c-
 Si technology is expected to play an important role in the future of elect
 ricity generation. In this perspective\, developing tomorrow’s device st
 ructures and characterization tools\, strengthening scientific bases\, whi
 le setting up highly cost effective production routes is a fantastic chall
 enge for scientists and engineers.\n\nCrystalline silicon solar cell effic
 iencies are improving thanks to advanced solar cell concepts along with a 
 better understanding of the underlying physics. Monocrystalline based sili
 con solar cells reach highest efficiencies\, provided outstanding electron
 ic surface passivations are achieved. In this respect\, amorphous silicon 
 does not only yield an excellent surface passivation but can simultaneousl
 y form the semiconductor junction leading to crystalline silicon cells wit
 h record open-circuit voltage. Advanced multicrystalline silicon solar cel
 ls are dominated by their material quality. The junction diffusion process
  and the surface passivation layer have the additional task of improving t
 he multicrystalline silicon (mc-Si) by leading to internal and external im
 purities gettering and dangling bond passivation. Monitoring mc-Si materia
 l quality during processing is greatly facilitated with novel characteriza
 tion methods such as luminescence imaging. Such techniques are additionall
 y invaluable for improving metallization schemes. Eventually\, future effi
 ciency enhancements are also expected from novel light-incoupling and ligh
 t-trapping schemes.
LOCATION:CO 017 https://plan.epfl.ch/?room==CO%20017
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR
