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SUMMARY:Edge channel transport in InAs/GaSb combined quantum wells
DTSTART:20150220T141500
DTSTAMP:20260505T222613Z
UID:a628dab5c7a6e75fbfc8b613639acf0759bf4648fc43ddb33cfe6996
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Werner Wegscheider\, Laboratory for Solid State Physics\
 , Physics Department\, ETH Zürich\nAdjacent InAs and GaSb layers\, which 
 are characterized by a broken-gap (type II) band alignment at the interfac
 e\, so-called combined quantum wells (CQWs)\, have exceptional properties.
  As a consequence of the spatial separation of electron and hole wave func
 tions\, the resulting state of matter becomes electric-field tunable. In p
 articular\, for maximum overlap of electron and hole wave-functions a hybr
 idization gap opens and with the Fermi level in this gap the system consti
 tutes a 2D topological insulator (TI). In this talk I will present growth 
 investigations of such InAs/GaSb heterostructures and correlate these with
  the transport properties of the 2D TI system. In gate-tunable structures 
 we observe the crossover from electron to hole transport. At the charge ne
 utrality point a giant nonlocal response\, indicative for the presence of 
 helical quantum Hall edge channels\, is observed under strong perpendicula
 r magnetic fields. In hybrid structures\, made from InAs/GaSb CQWs and sup
 erconductors\, superconducting transport is observed. Using superconductin
 g quantum interference (SQI)\, we were able to demonstrate tuning between 
 edge-dominated and bulk dominated transport regimes as a function of elect
 rostatic gating.\nBio: Werner Wegscheider has been Professor in the Labora
 tory for Solid State Physics at ETH Zurich since February 2009.
LOCATION:PH L1 503 (Aquarium) http://plan.epfl.ch/?room=PHL1503
STATUS:CONFIRMED
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