BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate D
 ielectric
DTSTART:20100706T171500
DTSTAMP:20260928T200318Z
UID:cf40b8bccba15e33ed92b9a0fe42be5cae023feed42caf370ef50c50
CATEGORIES:Thesis defenses
DESCRIPTION:Madame Katherine Boucart\nDirecteurs de thèse: prof. M.-A. Io
 nescu et Dr W. Riess
LOCATION:ELA1
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR