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VERSION:2.0
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SUMMARY:Strain engineering in Two-dimensional materials
DTSTART:20150501T141500
DTSTAMP:20260407T230535Z
UID:50cc8cc6a2c589b67ccce0d82240d3bcab934be8247f61b9f0ce1fc2
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Shu Ping Lau\nDepartment of Applied Physics\, The Hong K
 ong Polytechnic University\, Hung Hom\, Kowloon\, Hong Kong SAR\, China\nB
 io: Sep 2008 - present\nProfessor\, Department of Applied Physics\, The Ho
 ng Kong Polytechnic University\nApril 2007 – Aug 2008\nAssistant Head\, 
 Division of Microelectronics\, School of Electrical and Electronic Enginee
 ring\, Nanyang Technological University\nJan. 2004  - Aug 2008\nAssociate
  Professor\, School of Electrical and Electronic Engineering\, Nanyang Tec
 hnological University\nOct. 1998  – Dec. 2003\nAssistant Professor\, Sc
 hool of Electrical and Electronic Engineering\, Nanyang Technological Univ
 ersity\nFeb. 1996- Oct. 1998\nResearch Fellow\, Department of Electronic E
 ngineering\, University of Surrey\, U.K.\nFe. 1995 – Jan. 199\nSenior Re
 search Assistant\, Department of Materials Engineering\, University of Wal
 es Swansea\, U.K.\nOct. 1991 – Feb. 1995\nResearch Student\, Department 
 of Materials Engineering\, University of Wales Swansea\, U.K.\nStrain engi
 neering is a powerful and widely used strategy for boosting the performanc
 e of electronic\, optoelectronic and spintronic devices. By applying a str
 ain through lattice mismatch between epitaxial films and substrates or thr
 ough bending of films on elastic substrates\, this strategy can be used to
  increase the carrier mobility in semiconductors or to lift the emission e
 fficiency of light-emitting devices. Particularly\, due to reduced dimensi
 ons\, nanostructures become more flexible to be highly strained\, which pr
 ovides more space for strain engineering. Although low-dimensional nanostr
 uctures are relatively flexible\, the reported tunability of bandgap is wi
 thin 100 meV per 1% strain. It is also challenging to control strains in a
 tomically thin semiconductors precisely and monitor the optical and phonon
  properties simultaneously. We developed an electro-mechanical device that
  can apply biaxial compressive strain to chemical vapor deposited MoS2 nan
 osheets supported by a piezoelectric substrate and covered by a transparen
 t graphene electrode. Photoluminescence and Raman characterizations show t
 hat the direct bandgap can be blue-shifted for ~300 meV per 1% strain. The
  exceptional high strain tunability of electronic structure in MoS2 promis
 ing a wide range of applications in functional nanodevices and the develop
 ed methodology should be generally applicable for two-dimensional semicond
 uctors.\nHost: Oleg Yazyev and Laszlo Forro
LOCATION:PH L1 503 (The aquarium ) 
STATUS:CONFIRMED
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