BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Leakage mechanisms and contact technologies in InAlN/GaN high elec
 tron mobility transistors
DTSTART:20150529T173000
DTSTAMP:20260506T080606Z
UID:771e8a36efcdfeb2582cde5fd051cd5da651096b749b46817203eb10
CATEGORIES:Thesis defenses
DESCRIPTION:Lorenzo LUGANI\nThesis directors : Prof. N. Grandjean\, Dr M. 
 Py\nPhotonics doctoral program.\nThesis 6628
LOCATION:Auditoire CE 3 http://plan.epfl.ch/?zoom=19&recenter_y=5864182.97
 07&recenter_x=731341.22227&layerNodes=fonds\,batiments\,labels\,informatio
 n\,parkings_publics\,arrets_metro\,transports_publics&floor=1&q=Auditoire_
 CE%203
STATUS:CONFIRMED
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