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SUMMARY:Nitride nanowire light emitting diodes: from single wire propertie
 s to flexible light emitters
DTSTART:20151008T160000
DTSTAMP:20260405T200439Z
UID:4e5b5d90eb502150f9ad162d0628f282af306d111f1f5bf285d49a96
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr. Maria Tchernycheva\, Université Paris Sud\nI will present
  our recent work on nitride nanowire based light emitters. These nanomater
 ials have the potential to boost the device performance\, to improve the e
 nergy efficiency\, to reduce the cost and to bring new functionalities. In
  particular\, I will discuss our recent progress towards flexible nitride 
 nanowire devices. We propose a method to combine high flexibility of polym
 er films with high quantum efficiency provided by nitride nanowires to ach
 ieve flexible inorganic light emitting diodes and light sensors. I will al
 so discuss the fabrication and characterization of single nanowire light e
 mitting diodes with graphene transparent contacts the structural character
 ization of these nanowires using charge collection microscopy\, the possib
 ility to control the LED color by a post-growth treatment as well as the c
 oupling of single nanowire emitters with waveguides in order to form a fun
 ctional photonic platform.\nBio: Tchernycheva Maria\, born in 1979\, is an
  engineer from the Ecole Polytechnique ( X98 ) with a doctorate in physics
  from the University of Paris Sud (2005). Between 2005 and 2006 she worked
  as a postdoctoral researcher at the Laboratory of Photonics and Nanosctru
 ctures on the development of semiconductor nanowires. In 2006 Maria Tchern
 ycheva joined the Institute of Fundamental Electronics as CNRS researcher.
  His works are focused on the Current Development of optoelectronic device
 s such as photodetectors\, light emitting diodes\, devices for energy scav
 enging and basic semiconductor nanowires.
LOCATION:MXC320 http://plan.epfl.ch/?lang=en&room=MXC320
STATUS:CONFIRMED
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