BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Photoresist trimming for the formation of 65-45 nm gate stack with
 in 90 nm design rules
DTSTART:20161007T090000
DTEND:20161007T103000
DTSTAMP:20260501T141525Z
UID:8328a590cb495bfd8015bde4ffe53c4865cba9097d4162a38bfbdb43
CATEGORIES:Conferences - Seminars
DESCRIPTION:Seminar given by a PhD applicant at EDPY
LOCATION:CH G1 495 https://plan.epfl.ch/?room==CH%20G1%20495
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR