BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Quantum Transport in 2D Transition Metal Dichalcogenides
DTSTART:20151211T141500
DTSTAMP:20260916T054237Z
UID:62ad1efa38057b9da7ae5d0eb7f5b249a368b1c03e08239bc0d6011e
CATEGORIES:Conferences - Seminars
DESCRIPTION:Alberto Morpurgo\, University of Geneva\nFollowing the discov
 ery of graphene\, it has become clear that there is a very broad category 
 of materials enabling the realization of virtually perfect two-dimensional
  crystals of atomic thickness\, exhibiting new interesting physical phenom
 ena. Research on these “2D Materials” is developing at an impressive p
 ace disclosing new results and posing interesting fundamental questions. T
 he long-term goal is to understand and control the electronic properties o
 f materials\, and of their heterostructures\, at the atomic scale\, exploi
 ting mechanisms that are at the same time unexpectedly powerful and simple
 . In this talk I will discuss our work on transport and opto-electronics o
 f two-dimensional semiconducting transition metal dichalcogenides\, i.e.\,
  materials like WS2 and MoS2. Much of the results that we have obtained or
 iginate from the study of transport through field-effect transistors with 
 ionic-liquid gates\, which enable the accumulation of surface charge carri
 er densities significantly in excess of 1014 cm-2 for both charge polariti
 es (i.e.\, for both electrons or holes).\nResults that I will discuss incl
 ude the observation of gate-induced superconductivity in MoS2\, for multil
 ayer of all thickness down to individual monolayers\; the use of ionic liq
 uid gate to extract the band-gap of a semiconductor from simple measuremen
 ts of transport in a field-effect transistor\; the realization of light em
 itting transistors based on mono and bilayers of WS2. I will also discuss 
 experiments on van der Waals hetesrostructures combining WS2 and graphene\
 , which allow us to induce a very strong spin-orbit interaction in graphen
 e\, while preserving the high-electronic quality of the material and the b
 asic aspects of Dirac electron physics.
LOCATION:CE 1 5 https://plan.epfl.ch/?room==CE%201%205
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR