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SUMMARY:Electronic properties of hybrid 2D ferroelectric structures
DTSTART:20160314T131500
DTEND:20160314T141500
DTSTAMP:20260428T161453Z
UID:7ad8e086aae0d86ba266babe5136aa54f8b793a05d79f523ec65b257
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Alexei Gruverman\, Department of Physics and Astronomy -
  University of Nebraska\nOver the last decade\, there have been tremendous
  developments in the fields of ferroelectric (FE) oxides and two-dimension
 al (2D) electronic materials. The revival of the first group stemmed from 
 the recent advances in synthesis and characterization of the complex oxide
  materials along with predictive modeling of ferroelectricity at the nanos
 cale\, which lead to discovery of a breadth of novel phenomena. The second
  group burst into the limelight with the discovery of the unusual physical
  properties of graphene followed by demonstration of an extended family of
  2D materials with the unique physical and chemical characteristics that c
 annot be found in their three-dimensional counterparts.\nThe variability o
 f the electronic properties of 2D materials and ferroelectrics offers a we
 alth of fundamentally important physical phenomena and exciting technologi
 cal opportunities for the hybrid 2D-FE heterostructures comprising these m
 aterials. Among particularly promising aspects of these heterostructures i
 s the electronic transport intricately coupled and enabled by careful cont
 rol of ferroelectric polarization\, which allows realization of non-conven
 tional devices with enhanced functional characteristics.\nIn this presenta
 tion\, I will discuss implementation of the hybrid 2D-FE electronic device
 s that exhibit polarization-controlled non-volatile modulation of the resi
 stive behavior. While many 2D materials can be considered in conjunction w
 ith FE materials\, this talk primarily focuses on the use of graphene and 
 transition metal dichalcogenide MoS2. Specifically\, it will be shown how 
 polarization reversal can modulate (1) the in-plane transport of the inter
 facial conducting channel in the FE field effect devices\, and (2) the per
 pendicular-to-plane tunneling conductance in the FE tunnel junction device
 s. The role of the interface engineering in controlling the functional pro
 perties of these devices will be discussed as well. Finally\, a new paradi
 gm for voltage-free tuning of the interface conductance through mechanical
  stress will be presented. It will be shown that the underlying mechanism 
 of this effect is the flexoelectric coupling between the switchable electr
 omechanical behavior of the complex oxide materials and their electronic t
 ransport properties.\nHere are some references:\nA.Lipatov\, P.Sharma\, A.
 Gruverman\, and A.Sinitskii\, “Optoelectrical molybdenum disulfide (MoS2
 ) – ferroelectric memories”\, ACS Nano 9\, 8089-8098 (2015).   \nH.
 Lu\, A.Lipatov\, S.Ryu\, D.J.Kim\, M.Y.Zhuravlev\, C.B.Eom\, E.Y.Tsymbal\,
  A.Sinitskii\, and A.Gruverman\, “Ferroelectric Tunnel Junctions with Gr
 aphene Electrodes”\, Nat. Comm. 5\, 5518 (2014).\nH.Lu\, C.W.Bark\, D. E
 sque de los Ojos\, J.Alcala\, C.B.Eom\, G.Catalan\, and A.Gruverman\, “M
 echanical Writing of Polarization”\, Science 336\, 59-61 (2012).\nBio: D
 r. Alexei Gruverman is a Charles Bessey Professor at the Department of Phy
 sics and Astronomy\, University of Nebraska-Lincoln. He received his PhD d
 egree in Solid State Physics from the Ural State University in Ekaterinbur
 g\, Russia. His research interests are in the field of scanning probe micr
 oscopy of functional materials\, electronic phenomena in ferroics\, and in
 formation storage technologies. Prior to joining UNL in 2007 he held resea
 rch scientist positions at the Joint Research Center for Atom Technology i
 n Tsukuba\, Japan\, and at Sony Corporation\, Yokohama\, Japan\, and resea
 rch professorship position at the North Carolina State University\, USA. W
 hile working in Japan he has pioneered the SPM-based method for non-destru
 ctive high-resolution imaging of ferroelectric domains in thin films and m
 emory devices - an approach now known as Piezoresponse Force Microscopy (P
 FM). He has co-authored over 160 papers in peer-reviewed international jou
 rnals (including Science\, Nature Materials and Physical Review Letters)\,
  which are cited more than 6000 times\, a number of book chapters and revi
 ew articles and has edited three books and several special journal issues 
 on ferroelectricity. He serves as an associate editor for the IEEE Transac
 tions on Ultrasonics\, Ferroelectrics and Frequency Control. He is a recip
 ient of the 2004 Ikeda Foundation Award and ISIF 2010 Outstanding Achievem
 ent Award and is a Fellow of the American Physical Society. His most impor
 tant scientific accomplishments along with the development of PFM include 
 development of an experimental approach for testing the fast switching dom
 ain dynamics in ferroelectric\nmemory capacitors and demonstration of the 
 electroresistance effect in ferroelectric tunnel junctions.
LOCATION:MXF 1 https://plan.epfl.ch/?room==MXF%201
STATUS:CONFIRMED
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