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SUMMARY:Al2O3 passivation of c-Si surfaces
DTSTART:20090908T110000
DTSTAMP:20260405T164851Z
UID:489ad247a18829f47dd4394c3b80eaad6206508d16c9399d562ef09b
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr. Bram HOEX\nAbstract\nIn this talk I will give a short intr
 oduction into the Solar Energy Research Institute Singapore (SERIS) that c
 ommenced operations in April 2008. Subsequently\, I will give an overview 
 of surface passivation of crystalline silicon by atomic layer deposited Al
 2O3. I will touch upon\nthe specific characteristics of atomic layer depos
 ition\, the level of surface passivation by Al2O3 on n- and p-type crystal
 line silicon\, the first solar cell results using Al2O3 and the mechanism 
 of crystalline silicon surface passivation by Al2O3.
LOCATION:IMT Neuchâtel\, PVLAB\, Breguet 2 / Salle MT2 11.00-12.00
STATUS:CONFIRMED
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