BEGIN:VCALENDAR VERSION:2.0 PRODID:-//Memento EPFL// BEGIN:VEVENT SUMMARY:High efficiency HIT solar cell on thin (ƒ100 ƒÊm) silicon waf er DTSTART:20090917T110000 DTSTAMP:20260510T101040Z UID:d9c5ae90810debb47af064077921c4ac925a4a5e21c8520ed470186c CATEGORIES:Conferences - Seminars DESCRIPTION:Dr. Mikio Taguchi\nABSTRACT\nThe HIT (Heterojunction with Intr insic Thin-layer) structure\, which features a very thin undoped amorphous silicon (a-Si) layer inserted between doped a-Si layer and n-type c-Si\, is now recognized as the structure that realizes an high efficiency solar cell with a high open circuit voltage (Voc). We have already reported the high conversion efficiency of 23.0% (Voc: 0.729 V\, Jsc: 39.5 mA/cm2\, FF: 0.80\, total area: 100.4 cm2\, confirmed by AIST) with this structure. Th e most striking feature of the HIT solar cell is its high Voc of more than 720 mV that proves an excellent surface passivation ability of a-Si layer s at the hetero-interface.\nFor the cost reduction of solar cells\, it is necessary to use thinner silicon wafer together with an excellent light tr apping and well-passivated surface that are the essential for the high eff iciency solar cells. It is well known that the Voc increases with decreasi ng the wafer thickness in the solar cell whose surface recombination veloc ity is enough low. We have experimentally confirmed that the Voc of the HI T solar cell with a thinner (<100 ƒÊm) silicon wafer showed higher than a conventional wafer.\nThis is quite important for us to utilize thinner s ilicon wafer with keeping the conversion efficiency at high level by compe nsating for the drop of the Isc with improved Voc in the thinner cell. So far\, we have obtained the conversion efficiency of 21.4% with 85 ƒÊm th ick wafer\, and the extremely high Voc of 739 mV.\nRecent our activity on HIT solar cells with thin silicon with will be presented. LOCATION:IMT Neuchâ\;tel\, PVLAB\, Breguet 2 / Salle MT2 11.00-12.00 STATUS:CONFIRMED END:VEVENT END:VCALENDAR