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SUMMARY:Plasma processing of microcrystalline silicon at high deposition r
 ates for photovoltaic applications
DTSTART:20090626T110000
DTSTAMP:20260510T105633Z
UID:0c2667fa2998a824e8d42be427cb25f299ca7ba7220f5a06d5ad8a38
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Arno Smets\, Depart. Applied Physics\, University Eindho
 ven (NL)\nABSTRACT\nHydrogenated amorphous silicon (a-Si:H) and hydrogenat
 ed microcrystalline silicon (ƒÝc-Si:H) are thin film silicon phases whic
 h are generally deposited at low processing temperatures by means of plasm
 a enhanced chemical vapor deposition (PECVD) using hydrogen diluted silane
  gas mixtures. The lattice of dense a-Si:H is best described by a vacancy 
 rich network (1-2 %) which lacks any medium and long range order\, whereas
  the lattice of ƒÝc-Si:H consists of crystalline silicon grains (few nm
 ¡¦s up to microns) imbedded in to an amorphous network or tissue. One ho
 t application of these films is the integration in to thin silicon film ph
 otovoltaic multi-junction devices. In comparison to a-Si:H phase\, the ƒ
 Ýc-Si:H phase has the advantage of an enhanced spectral response in the r
 ed part of the solar spectrum and a better opto-electronic stability under
  illumination. 
LOCATION:EPFL - IMT-NE\, Breguet 2\, Neuch&acirc\;tel  Salle MT2
STATUS:CONFIRMED
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