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SUMMARY:The hydride stretching modes of hydrogenated vacancies in amorphou
 s and nanocrystalline silicon: a helpful tool for material characterizatio
 n
DTSTART:20090625T160000
DTSTAMP:20260427T225807Z
UID:97dc80079c2c808a05704259680e9349bdf104c65f4efddb35e759f3
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Arno Smets\, Depart. Applied Physics\, University Eindho
 ven (NL)\nABSTRACT \nHydrogen related defects and impurities have been obs
 erved in every solid phase of silicon\, like crystalline (c-Si)\, nano-/mi
 crocrystalline (nc-Si:H) and amorphous silicon (a-Si:H) and can significan
 tly affect the nature of the silicon\, like the electrical and structural 
 properties up to the diffusivity of dopants within the silicon. Recently\,
  the utilization of the signature of the hydride stretching modes in the i
 nfrared (SMs) has been proposed as a helpful material characterization too
 l [1-4]. The SM frequency positions depend critically on the hydrogen inco
 rporation configurations and therefore the SM signature can reveal the mic
 rostructure of various hydrogenated silicon phases. 
LOCATION:IEPFL- MT - NE\, Breguet 2\, Neuchâtel  salle MT2
STATUS:CONFIRMED
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