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SUMMARY:Using the right criteria for design and discovery
DTSTART:20170921T161500
DTEND:20170921T171500
DTSTAMP:20261002T014556Z
UID:1b6247c0546499c684603b21b87ca55c58a75339b1c7e7d04fcfdfef
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Chris G. Van De Walle\, University of California\, Santa
  Barbara\, USA\nBio: Ph. D. E. E.\, Stanford University\, 1986. Postdoctor
 al Scientist\, IBM T. J. Watson Research Center\, Yorktown Heights\, New Y
 ork (1986-1988). Senior Member of Research Staff\, Philips Laboratories\, 
 Briarcliff Manor\, New York (1988-1991). Adjunct Professor\, Columbia Univ
 ersity\, New York (1991). Principal Scientist/Senior Member/Member of Rese
 arch Staff\, Xerox Palo Alto Research Center (PARC)\, Palo Alto\, Californ
 ia (1991-2004 ). Alexander von Humboldt US Senior Scientist at the Fritz-H
 aber-Institut and the Paul-Drude-Institut\, Berlin\, Germany (May-October 
 1999). Professor\, Materials Department\, University of California\, Santa
  Barbara (2004-). Herbert Kroemer Chair in Materials Science\, University 
 of California\, Santa Barbara (2013-). Distinguished Professor\, Materials
  Department\, University of California\, Santa Barbara (2015-).\nMaterials
  design and discovery require a thorough knowledge of the underlying physi
 cs. Incomplete understanding can lead to misguided searches\, both experim
 entally and computationally.  I will illustrate these points with two cas
 e studies. \n\nThe Mott-Hubbard gaps of rare-earth titanates are commonly
  reported to be 0.2-0.7 eV. These values are based on optical reflectivity
  measurements\, from which the onset of optical absorption is derived.  R
 igorous computational and experimental studies for GdTiO3 indicate that th
 e gap is significantly larger\, and that the previously identified feature
  in the optical absorption is due to the excitation of small hole polarons
 .  These findings likely apply to a broader set of materials\, and impact
  the design of complex-oxide heterostructures as well as the search for ma
 terials in which the metal-insulator transition can be exploited. \n\nDef
 ect-assisted nonradiative recombination can severely affect the efficiency
  of electronic and optoelectronic devices.  The rule of thumb for assessi
 ng whether a defect will lead to strong nonradiative recombination has bee
 n based on whether the defect level is close to mid-gap.  However\, we ha
 ve found that strong nonradiative recombination can occur for defects that
  fail to meet this criterion.  These insights also impact the search for 
 novel qubits or single photon emitters for quantum information science.\n\
 n13th NCCR MARVEL "Distinguished Lecture"\nNCCR MARVEL - Events
LOCATION:SG 0211 https://plan.epfl.ch/?room==SG%0200211
STATUS:CONFIRMED
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