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SUMMARY:Engineering the properties of epitaxial quantum dots for quantum p
 hotonics
DTSTART:20180504T151500
DTSTAMP:20260925T061631Z
UID:4ae5653303ed1299e7593faf8c5b1fa6d386769fdc760801e3085787
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Armando Rastelli\, Johannes Kepler University Linz\, Aus
 tria\, “Engineering the properties of epitaxial quantum dots for quantum
  photonics”\nSemiconductor quantum dots (QDs) obtained by epitaxial grow
 th are regarded as one of the most promising solid-state sources of trigge
 red single and entangled photons for applications in emerging quantum tech
 nologies.\nWhile most of the studies presented so far have mostly focused 
 on InGaAs/GaAs QDs obtained by the Stranski-Krastanow (SK) growth mode\, G
 aAs QDs in AlGaAs matrix have emerged as a promising alternative to SK QDs
 .\nIn this talk I will begin by briefly discussing the growth of GaAs QDs 
 with highly symmetric shape  [1] using two independent molecular beam e
 pitaxy machines. I will then present recent results on the generation of h
 igh-quality single- and polarization-entangled photons from such dots usin
 g resonant two-photon excitation [2]. The good degree of indistinguishabi
 lity of the emitted photons recently allowed us to perform two-photon inte
 rference experiments using two independent QDs  [3]. Finally I will show
  that the addition of strain after growth not only allows the emission ene
 rgy and other properties to be tuned [4]\, but also the nature of confined
  holes in a QD to be modified. In particular\, uniaxial stress allows the 
 quantization axis of the QD to be reoriented in the growth plane [5]\, a c
 onfiguration particularly suitable for integrated quantum-photonics applic
 ations.\n \nReferences\n \n[1]        Y. H. Huo\, et al. Appl. Ph
 ys. Lett. 102\, 152105 (2013). Y. Huo et al. Nature Phys. 10\, 46 (2014)
 \n[2]         L. Schweickert\, et al. Appl. Phys. Lett. 112\, 093
 106 (2018)\; D. Huber\, et al. Nat. Commun. 8\, 15506 (2017)\; D. Huber e
 t al. arxiv.org/abs/1801.06655\n[3]         M. Reindl\, et al. Na
 no Lett. 17\, 4090 (2017).\n[4]         R. Trotta\, et al. Nature
  Comm. 7\, 10375 (2016).\n[5]         X. Yuan\, et al. https://a
 rxiv.org/abs/1710.03962.\n \nAbout the research of the speaker: https://
 www.jku.at/hfp/content/e184015/e183740/index_eng.html?team_view=section&t=
 3&emp=e184015/e183740/employee_groups_wiss184009/employees184010\n 
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STATUS:CONFIRMED
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