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SUMMARY:Interface Chemistry for Organic Electronics and Opto-electronics
DTSTART:20180322T171500
DTEND:20180322T181500
DTSTAMP:20260510T165049Z
UID:f545d04ef2475a38aa6aa481db32f0e9347349423f38ef73e94a6a24
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Seth Marder\nGeorgia Institute of Technology\nUSA\nOrgan
 ic semiconductors have attracted interest for electronic applications due 
 to their potential for use in low-cost\, large-area\, flexible electronic
  devices. Here we will report on recent developments pertaining to surfac
 e modifiers and dopants that could impact the charge injection/collection
  processes in organic light emitting diodes\, organic field effect transis
 tors\, and organic photovoltaic devices. In particular\, we will examine 
 how phosphonic acids assemble on ITO substrates\, the impact of the surfa
 ce dipole on the work function of the ITO and electron transfer kinetics 
 across surface modifiers. We will also discuss the development of metalloc
 enesbased dimers as n-dopants and very briefly described metal dithiolene
  complexes as p-dopants for organic semiconductors and their impact of de
 vice performance. \nSelected References:\n\n1. “n-Doping of Organic Ele
 ctronic Materials using Air-Stable Organometallics\,” Adv. Mater. 24 (5)
 \, 699-703 (February 2012\, DOI: 10.1002/adma.201103238)\n\n2. “Spatial
 ly modulating interfacial properties of transparent conductive oxides: Pat
 terning work function with phosphonic acid self-assembled monolayers\,”
  Adv. Mater. 24 (5)\, 642-646 (February 2012\,\nDOI: 10.1002/adma.20110232
 1)\n\n3. “Solution doping of organic semiconductors using air-stable n-d
 opants.” Appl. Phys. Lett. 100\, 083305 (February 2012)\n\n4. “A univ
 ersal method to produce low work function electrodes for organic electroni
 cs\,” Science 336 (6079)\, 327-332 (April 2012\, DOI: 10.1126/science.1
 218829)\n\n5. “The modification of indium tin oxide with phosphonic acid
 s: Mechanism of binding\, tuning of surface properties\, and potential fo
 r use in organic electronic applications.” Acc. Chem. Res . 45  (3)\, 3
 37-346\n(May 2012)\n\n6. “Ultralow doping in organic semiconductors: Evi
 dence of trap filling.” Phys. Rev. Lett. 109 (17)\, 176601/1-5 (Novembe
 r 2012\,  DOI: 10.1103/PhysRevLett.109.176601)\n\n7. “Reduction of cont
 act resistance by selective contact doping in fullerene n-channel organic 
 field-effect transistors.” Appl. Phys. Lett. 102\, 153303-153307 (April
  2013\, DOI: 10.1063/1.4802237)\n\n 8. “Orientation of phenylphosphonic
  acid self-assembled monolayers on a transparent conductive oxide: A comb
 ined NEXAFS\, PM-IRRAS\, and DFT study\,” Langmuir 29 \, 2166-2174 (Febr
 uary 2013\, DOI:\n10.1021/la304594t)\n\n9. “Production of Heavily n- and
  p-Doped CVD Graphene with Solution-Processed Redox-Active Metal- Organic
  Species\," Materials Horizons  Advance Article (September 2013\, DOI:\n1
 0.1039/C3MH00035D)\n\n10. "ITO Interface Modifiers Can Improve Voc  in Po
 lymer Solar Cells and Suppress Surface RecombinationJ. Phys. Chem. Lett. 
 4  (23)\, 4038-4044 (November 2013\, DOI: 10.1021/jz4021525)
LOCATION:BCH 2201 https://plan.epfl.ch/?room==BCH%202201
STATUS:CONFIRMED
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