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SUMMARY:Growth of GaAs nanowires observed by in situ TEM
DTSTART:20180316T151500
DTSTAMP:20260916T132747Z
UID:454977ed455bc12ed19e408f88ce4ea544b7e62ca413d82e142732a2
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr. Jean-Christophe Armand\, C2N-CNRS Saclay\, Univ. Paris Su
 d\n\nI will present original experiments of GaAs nanowire growth by molecu
 lar beam epitaxy performed in an aberration-corrected transmission electro
 n microscope. Growth can be observed in real-time with atomic resolution. 
 It proceeds by vapor-liquid-solid mechanism with a liquid catalyst droplet
  on top of the nanowires. The formation of each GaAs monolayer is tracked\
 , providing detailed information on growth phenomena. Relevant time scales
  and key parameters governing morphological and structural characteristics
  are extracted.\nSuch nanowires may adopt the cubic zinc blende or the hex
 agonal wurtzite structure. The formation of the two phases will be describ
 ed in details and I will show how to obtain abrupt transitions between the
  two crystal phases\, paving the way to the controlled fabrication of crys
 tal phase heterostructures.\nThe French National Research Agency (ANR) is 
 acknowledged for funding the TEMPOS/NANOMAX project in the framework of EQ
 UIPEX "Investissements d'Avenir" programme.\n \nAbout the research of the
  speaker: http://www.lpn.cnrs.fr/fr/ELPHYSE/Nanowires.php\n 
LOCATION:CE 1 5 https://plan.epfl.ch/?room==CE%201%205
STATUS:CONFIRMED
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