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SUMMARY:GaN for the Future
DTSTART:20190902T101500
DTEND:20190902T113000
DTSTAMP:20260407T195456Z
UID:87856d85aabd7c5a29ee4c1f6a1ced350871598f217f584bd2044479
CATEGORIES:Conferences - Seminars
DESCRIPTION:Prof. Dr. Debbie Senesky\nStanford University\nInstitute of Mi
 croengineering - Distinguished Lecture\n\nCampus Lausanne SV 1717 (live)\n
 Campus Microcity MC B0 302 (video)\nZoom Live Stream: https://epfl.zoom.us
 /j/165147980 \n\nAbstract: There has been a tremendous amount of research 
 and industrial investment in gallium nitride (GaN) as it is positioned to 
 replace silicon in the billion-dollar (USD) power electronics industry\, a
 s well as the post-Moore microelectronics universe. In addition\, the 2014
  Nobel Prize in physics was awarded for pioneering research in GaN that le
 d to the realization of the energy-efficient blue light-emitting diode (LE
 D). Furthermore\, GaN electronics have operated at temperatures as high as
  1000°C making it a viable platform for robust space-grade electronics an
 d nano-satellites.  Even with these major technological breakthroughs\, w
 e have just begun the “GaN revolution.” New communities are adopting t
 his platform for a multitude of emerging device applications including the
  following: sensing\, energy harvesting\, actuation\, communication\, and 
 photonics.  In this talk\, we will review and discuss the benefits of GaN
 ’s two-dimensional electron gas (2DEG) over silicon’s p-n junction for
  these new and emerging applications.  In addition\, we will discuss oppo
 rtunities for transformational development of this semiconductor device pl
 atform (e.g.\, interface engineering\, thermal metrology\, selective-area 
 doping) to realize future GaN-based electronic systems.\n \nBio: Debbie G
 . Senesky is an Assistant Professor at Stanford University in the Aeronaut
 ics and Astronautics Department and by courtesy\, the Electrical Engineeri
 ng Department. In addition\, she is the Principal Investigator of the EXtr
 eme Environment Microsystems Laboratory (XLab).  Her research interests i
 nclude the development of micro- and nano-scale sensors\, high-temperature
  wide bandgap (GaN\, SiC) electronics\, and robust interface materials for
  operation within extreme harsh environments.   She received the B.S. deg
 ree (2001) in mechanical engineering from the University of Southern Calif
 ornia. She received the M.S. degree (2004) and Ph.D. degree (2007) in mech
 anical engineering from the University of California\, Berkeley. In addit
 ion\, she has held positions at GE Sensing (formerly known as NovaSensor)\
 , GE Global Research Center\, and Hewlett Packard.  She has served on th
 e program committee of the IEEE International Electron Devices Meeting (IE
 DM)\, International Conference on Solid-State Sensors\, Actuators and Micr
 osystems (Transducers)\, and International Symposium on Sensor Science (I3
 S).  She is currently co-editor for IEEE Electron Device Letters\, Sensor
 s (journal)\, and Micromachines (journal).   In recognition of her work\,
  she is a recipient of the Emerging Leader Abie Award from AnitaB.org\, 
 NASA Early Faculty Career Award\, and Alfred P. Sloan Foundation Ph.D. Fe
 llowship Award. More information about Prof. Senesky can be found at xlab
 .stanford.edu or on Instagram/Twitter: @debbiesenesky.\n\nNote: The Semin
 ar Series is eligible for ECTS credits in the EDMI doctoral program. 
LOCATION:SV 1717 https://plan.epfl.ch/?room==SV%201717
STATUS:CONFIRMED
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