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SUMMARY:New Materials with Complex Electronic Properties: The Example of B
 lack Phosphorus and its IV-VI Analogues
DTSTART:20190920T151500
DTEND:20190920T161500
DTSTAMP:20260407T042013Z
UID:42363eced7072bf5a1979a64734ec22b0afe965487ba77724b810477
CATEGORIES:Conferences - Seminars
DESCRIPTION:Dr Fabian Von Rohr\, Department of chemistry University of Zur
 ich\n \nIn this presentation\, I will discuss some of our recent results 
 regarding the layered\, narrow-gap semiconductor black phosphorus (black-P
 ). The layers of black-P consist of phosphorus six-rings in a so-called ch
 air conformation\, and they are weakly bound by van der Waals forces. We h
 ave established the detailed high-pressure phase diagram of black-P reveal
 ing an anomalous pressure dependence of the superconducting critical tempe
 rature and the importance of hole carriers in developing superconductivity
 . We find that the experimentally observed Tc plateau at high pressure can
 not be fully understood with solely considering an electron-phonon mechani
 sm.\nWe have\, furthermore\, extended the scope of known black-P IV-VI ana
 logues. We report on the electronic and structural properties of β-GeSe\,
  a previously unreported polymorph of GeSe\, with a unique crystal structu
 re that displays strong two-dimensional structural features. Electronic st
 ructure calculations suggest that β-GeSe has a bulk band gap of Δ ≈ 0.
 5 eV\, and\, in its monolayer form\, Δ ≈ 0.9 eV. These values fall righ
 t in-between those of α-GeSe and black phosphorus\, making it a promising
  candidate for future applications.
LOCATION:CE 1 5 https://plan.epfl.ch/?room==CE%201%205
STATUS:CONFIRMED
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