BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Memento EPFL//
BEGIN:VEVENT
SUMMARY:Material and Electrical study of  HfO2-Based Resistive Random Acce
 ss Memories (ReRAMs)
DTSTART:20191122T170000
DTSTAMP:20260509T203706Z
UID:8465cdfa86dc3e71c792bbe731c6b6e50d6a38820ae81eccd7ba853d
CATEGORIES:Thesis defenses
DESCRIPTION:Behnoush ATTARIMASHALKOUBEH\nThesis Directors: Prof. Y. Lebleb
 ici\, Prof. P. Muralt\nMicrosystems and Microelectronics doctoral program\
 nThesis Nr. 7412
LOCATION:ELA 1 https://plan.epfl.ch/?room==ELA%201
STATUS:CONFIRMED
END:VEVENT
END:VCALENDAR