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SUMMARY:UPDATE - EE Distinguished Speakers Seminar: 2D electronic devices 
 and materials
DTSTART:20200424T140000
DTEND:20200424T150000
DTSTAMP:20260408T060344Z
UID:72f8709b66a057ddfc072777c2fd8169d8fbf26bb9f29edc158579db
CATEGORIES:Conferences - Seminars
DESCRIPTION:Andras Kis is an Associate Professor in Electrical Engineering
  at EPFL\, Lausanne. He started research on 2D semiconductors in 2008\, af
 ter joining EPFL and has made fundamental contributions to the study of th
 e electronic properties of atomically thin TMDCs. His pioneering work on M
 oS2 transistors was the first demonstration of high-quality device on a 2D
  semiconductor and has been cited over 10’000 times. Andras Kis is also 
 serving as the editor in chief of the Nature partner journal 2D materials 
 and applications and is a highly cited researcher. Prior to (re)joining EP
 FL as faculty\, Kis was a postdoctoral researcher at UC Berkeley in the gr
 oup of Alex Zettl. He received his Ph.D. in physics from EPFL in 2003 and 
 received his MSc in physics from the University of Zagreb\, Croatia. His m
 ajor awards include the Latsis prize in 2004\, ERC starting grant in 2009 
 and ERC consolidator grant in 2015\, both awarded for research in the area
  of electrical properties of 2D transition metal dichalcogenides.\nAbstrac
 t: The discovery of graphene marked the start of research in 2D electroni
 c materials which was expanded in new directions with MoS2 and other laye
 red semiconducting materials such as transition metal dichalcogenides (TMD
 Cs). They have a wide range of interesting fundamental properties and pote
 ntial applications due to a unique combination of atomic scale thickness\,
  direct band gap and high mechanical strength. \n\nI will show here our l
 atest advances in electronics and photonics based on 2D semiconductors. Fi
 rst\, I will show the realization of room-temperature excitonic transistor
 s: electrically controlled switches operating on currents of excitons in a
  solid-state device based on a 2D heterostructure [1]. Our more advanced s
 tructures now also offer the way to manipulate the polarization as well as
  the emission intensity and wavelength in excitonic devices [2] based on q
 uantum metamaterials allowing control of valley (spin) polarized excitons 
 [3]. \n\nFinally\, I will present our efforts on more conventional electr
 onic devices and circuits\, involving integrated transistor and memory ele
 ments based on 2D materials [4]. \n\nReferences\n[1] A. Ciarrocchi\, D. U
 nuchek\, A. Avsar\, K. Watanabe\, T. Taniguchi\, A. Kis. Nature Photonics 
 13\, 131–136 (2019).\n[2] D. Unuchek\, A. Ciarrocchi\, A. Avsar\, K. Wat
 anabe\, T. Taniguchi\, A. Kis. Room-Temperature Electrical Control of Exci
 ton Flux in a van Der Waals Heterostructure. Nature 560\, 340–344 (2018)
 .\n[3] D. Unuchek\, A. Ciarrocchi\, A. Avsar\, Z. Sun\, K. Watanabe\, T. T
 aniguchi\, A. Kis. Valley-Polarized Exciton Currents in a van Der Waals He
 terostructure. Nature Nanotechnology 14\, 1104–1109 (2019)\; DOI:10.1038
 /s41565-019-0559-y.\n[4] G. M. Marega\, Y. Zhao\, A. Avsar\, Z. Wang\, A. 
 Kis. Under review.\n\nZoom link: https://epfl.zoom.us/j/96012227897?pwd=bG
 1oL1BpeUFYSFByT21UbEdrcnJWdz09\n 
LOCATION:Online webinar
STATUS:CONFIRMED
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