Nano Devices at the Taiwan National Nano Device Laboratories
Event details
| Date | 08.11.2017 |
| Hour | 11:00 › 12:00 |
| Speaker | Dr. Wen-Kuan Yeh |
| Location | |
| Category | Conferences - Seminars |
Title: New Paradigm of Nano Device: beyond more than Moore CMOS and Introduction to the Taiwan National Nano Device Laboratories
Scope: The presentation is part of a visit of the of the delegation from Taiwan National Nano Device Laboratories (NDL). The talk will include an overview of the micro-/nanofabrication capabilities at NDL and a technical presentation about beyond more than Moore CMOS devices. The talk is open to the EPFL community and after the talk, there are possibilities for discussion on potential collaborations.
Abstract: As MOSFETs are scaled down to sub-10nm and below, power consumption is the major limitation to maintain device performance well. Thus, how to suppress the device’s sub-threshold leakage and gate leakage is the key issue for sub-10nm MOSFET especially for high performance/lower power system. In order to scale MOSFET following Moore’s law continuously, there are some candidates are introduced to replace conventional MOSFET structure including FinFET, GAA transistor, NCFET and 2D material FET. This talk will explain semiconductor nano device trend and related advanced technology development especially for coming 7nm technology regime. And other specific device for more than Moore application including sensor, energy harvesting device for artificial Intelligence (AI) and Internet on Thing (IoT) will be also explained. By the way, Taiwan National Nano Device Laboratory (NDL) will be introduced including mission, facility, research capability and model of international collaboration.
Speaker Biography: Wen-Kuan Yeh was born in Hsinchu, Taiwan in 1964. He received his Ph.D. in electronics engineering from National Chiao-Tung University, Taiwan in 1996. In 1989-90, he worked at Taiwan Semiconductor Manufacturing Corporation (tsmc) Research and Development Division, as a Research Intern to work on sub-um CMOSFET and his M.S. thesis. During 1996 to 2000, He joined Unite Microelectronic Corporation (UMC), Technology & Process Development Division as a Research Scientist. He is currently a full Professor of Electrical Engineering Department at National University of Kaohsiung, and also serves as the General Director of National Nano Device laboratories (NDL), a leading government lab at Taiwan. He is a chair of IEEE EDS Tainan Chapter. He has published 5 edited books, over 100 peer reviewed papers, 3 book chapters, and over 100 patents. His recent work is focused on the field of nano-scaled FETs, SOI FET, and 2D FET.
Delegation Participants: Wen-Kuan Yeh (Director General); Jia-Min Shieh (Deputy Director General/Research Fellow); Ting-Jen Hsueh (Research Fellow / Division Director)
Scope: The presentation is part of a visit of the of the delegation from Taiwan National Nano Device Laboratories (NDL). The talk will include an overview of the micro-/nanofabrication capabilities at NDL and a technical presentation about beyond more than Moore CMOS devices. The talk is open to the EPFL community and after the talk, there are possibilities for discussion on potential collaborations.
Abstract: As MOSFETs are scaled down to sub-10nm and below, power consumption is the major limitation to maintain device performance well. Thus, how to suppress the device’s sub-threshold leakage and gate leakage is the key issue for sub-10nm MOSFET especially for high performance/lower power system. In order to scale MOSFET following Moore’s law continuously, there are some candidates are introduced to replace conventional MOSFET structure including FinFET, GAA transistor, NCFET and 2D material FET. This talk will explain semiconductor nano device trend and related advanced technology development especially for coming 7nm technology regime. And other specific device for more than Moore application including sensor, energy harvesting device for artificial Intelligence (AI) and Internet on Thing (IoT) will be also explained. By the way, Taiwan National Nano Device Laboratory (NDL) will be introduced including mission, facility, research capability and model of international collaboration.
Speaker Biography: Wen-Kuan Yeh was born in Hsinchu, Taiwan in 1964. He received his Ph.D. in electronics engineering from National Chiao-Tung University, Taiwan in 1996. In 1989-90, he worked at Taiwan Semiconductor Manufacturing Corporation (tsmc) Research and Development Division, as a Research Intern to work on sub-um CMOSFET and his M.S. thesis. During 1996 to 2000, He joined Unite Microelectronic Corporation (UMC), Technology & Process Development Division as a Research Scientist. He is currently a full Professor of Electrical Engineering Department at National University of Kaohsiung, and also serves as the General Director of National Nano Device laboratories (NDL), a leading government lab at Taiwan. He is a chair of IEEE EDS Tainan Chapter. He has published 5 edited books, over 100 peer reviewed papers, 3 book chapters, and over 100 patents. His recent work is focused on the field of nano-scaled FETs, SOI FET, and 2D FET.
Delegation Participants: Wen-Kuan Yeh (Director General); Jia-Min Shieh (Deputy Director General/Research Fellow); Ting-Jen Hsueh (Research Fellow / Division Director)
Practical information
- Informed public
- Free