Semiconductor Nanowires – From Materials to Devices
Event details
| Date | 05.05.2014 |
| Hour | 13:15 › 14:15 |
| Speaker | Prof. Heike Riel, IBM Zurich Research Laboratory |
| Location | |
| Category | Conferences - Seminars |
Semiconducting Nanowires have developed into a platform for nanoscience and nanotechnology attractive for a plethora of applications ranging from electronics to optoelectronics, including various types of sensors, and also energy harvesting devices such as e.g. solar cells and thermoelectric devices.
Approaching fundamental limits in scaling-down conventional silicon microelectronic devices forces the semiconductor industry to research and develop novel materials and device geometries. In that regard bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of electronic and optoelectronic devices. The ability to epitaxially grow abrupt axial heterostructures with large lattice mismatch is unique for the nanowire geometry, and together with the possibility of in-situ doping and core-shell structures provides the basis for novel device concepts.
In this talk I will give an overview about our activities in the field of semiconducting nanowires for electronic, optoelectronic and thermoelectric application. I will briefly review our work on III-V nanowire growth including doping and material characterization, demonstrating the opportunities of the nanowire approach. In addition, device fabrication, electrical, optical and thermo-electrical characterization of nanowire-based devices will be discussed.
Bio: Heike Riel is IBM Fellow and the Manager of the Nanoscale Electronics Group at
IBM Research – Zurich. She is responsible for projects in the area of
semiconducting nanowires for applications in electronics, optoelectronics and
energy harvesting and molecular electronics. Her research focuses on new
materials and novel device concepts for future nanoelectronics in particular steep
slope devices for energy efficient computation.
Heike Riel studied physics at the University of Friedrich-Alexander Erlangen-
Nuremberg (Germany) and received a PhD from the University of Bayreuth
(Germany) in 2003 for her work on the optimization of multilayer organic lightemitting
devices. After an internship at the Hewlett-Packard Research Laboratory,
Palo Alto, she joined the IBM Zurich Research Lab in 1998 as a PhD student, and
became a Research Staff Member in 2003. Since 2008 she has been leading the
Nanoscale Electronics Group and in 2013 she became IBM Fellow. In 2011 Heike
has graduated with an MBA from Henley Business school.
Heike Riel made major contributions to the development of the, at that time,
world’s largest ever (20”) full-color amorphous-silicon active-matrix display
based on organic light-emitting diodes, which was presented in May 2003. For
her outstanding scientific contributions Heike was elected by Technology Review,
MIT’s Magazine of Innovation, to the TR100, the annual list of the world’s 100
Top Young Innovators in September 2003 and she received the 2005 Applied
Physics Award of the Swiss Physical Society. In June 2012 Heike Riel received
the award in the category “Technical or Scientific Innovation” which was awarded
by the Swiss Association of Women in Engineering (SVIN) on the occasion of
their 20th anniversary.
Approaching fundamental limits in scaling-down conventional silicon microelectronic devices forces the semiconductor industry to research and develop novel materials and device geometries. In that regard bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of electronic and optoelectronic devices. The ability to epitaxially grow abrupt axial heterostructures with large lattice mismatch is unique for the nanowire geometry, and together with the possibility of in-situ doping and core-shell structures provides the basis for novel device concepts.
In this talk I will give an overview about our activities in the field of semiconducting nanowires for electronic, optoelectronic and thermoelectric application. I will briefly review our work on III-V nanowire growth including doping and material characterization, demonstrating the opportunities of the nanowire approach. In addition, device fabrication, electrical, optical and thermo-electrical characterization of nanowire-based devices will be discussed.
Bio: Heike Riel is IBM Fellow and the Manager of the Nanoscale Electronics Group at
IBM Research – Zurich. She is responsible for projects in the area of
semiconducting nanowires for applications in electronics, optoelectronics and
energy harvesting and molecular electronics. Her research focuses on new
materials and novel device concepts for future nanoelectronics in particular steep
slope devices for energy efficient computation.
Heike Riel studied physics at the University of Friedrich-Alexander Erlangen-
Nuremberg (Germany) and received a PhD from the University of Bayreuth
(Germany) in 2003 for her work on the optimization of multilayer organic lightemitting
devices. After an internship at the Hewlett-Packard Research Laboratory,
Palo Alto, she joined the IBM Zurich Research Lab in 1998 as a PhD student, and
became a Research Staff Member in 2003. Since 2008 she has been leading the
Nanoscale Electronics Group and in 2013 she became IBM Fellow. In 2011 Heike
has graduated with an MBA from Henley Business school.
Heike Riel made major contributions to the development of the, at that time,
world’s largest ever (20”) full-color amorphous-silicon active-matrix display
based on organic light-emitting diodes, which was presented in May 2003. For
her outstanding scientific contributions Heike was elected by Technology Review,
MIT’s Magazine of Innovation, to the TR100, the annual list of the world’s 100
Top Young Innovators in September 2003 and she received the 2005 Applied
Physics Award of the Swiss Physical Society. In June 2012 Heike Riel received
the award in the category “Technical or Scientific Innovation” which was awarded
by the Swiss Association of Women in Engineering (SVIN) on the occasion of
their 20th anniversary.
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