Al2O3 passivation of c-Si surfaces
Event details
| Date | 08.09.2009 |
| Hour | 11:00 |
| Speaker | Dr. Bram HOEX |
| Location |
IMT Neuchâtel, PVLAB, Breguet 2 / Salle MT2 11.00-12.00
|
| Category | Conferences - Seminars |
Abstract
In this talk I will give a short introduction into the Solar Energy Research Institute Singapore (SERIS) that commenced operations in April 2008. Subsequently, I will give an overview of surface passivation of crystalline silicon by atomic layer deposited Al2O3. I will touch upon
the specific characteristics of atomic layer deposition, the level of surface passivation by Al2O3 on n- and p-type crystalline silicon, the first solar cell results using Al2O3 and the mechanism of crystalline silicon surface passivation by Al2O3.
Links
Practical information
- General public
- Free
Contact
- Andrea Feltrin