Electronic properties of hybrid 2D ferroelectric structures
Event details
| Date | 14.03.2016 |
| Hour | 13:15 › 14:15 |
| Speaker | Prof. Alexei Gruverman, Department of Physics and Astronomy - University of Nebraska |
| Location | |
| Category | Conferences - Seminars |
Over the last decade, there have been tremendous developments in the fields of ferroelectric (FE) oxides and two-dimensional (2D) electronic materials. The revival of the first group stemmed from the recent advances in synthesis and characterization of the complex oxide materials along with predictive modeling of ferroelectricity at the nanoscale, which lead to discovery of a breadth of novel phenomena. The second group burst into the limelight with the discovery of the unusual physical properties of graphene followed by demonstration of an extended family of 2D materials with the unique physical and chemical characteristics that cannot be found in their three-dimensional counterparts.
The variability of the electronic properties of 2D materials and ferroelectrics offers a wealth of fundamentally important physical phenomena and exciting technological opportunities for the hybrid 2D-FE heterostructures comprising these materials. Among particularly promising aspects of these heterostructures is the electronic transport intricately coupled and enabled by careful control of ferroelectric polarization, which allows realization of non-conventional devices with enhanced functional characteristics.
In this presentation, I will discuss implementation of the hybrid 2D-FE electronic devices that exhibit polarization-controlled non-volatile modulation of the resistive behavior. While many 2D materials can be considered in conjunction with FE materials, this talk primarily focuses on the use of graphene and transition metal dichalcogenide MoS2. Specifically, it will be shown how polarization reversal can modulate (1) the in-plane transport of the interfacial conducting channel in the FE field effect devices, and (2) the perpendicular-to-plane tunneling conductance in the FE tunnel junction devices. The role of the interface engineering in controlling the functional properties of these devices will be discussed as well. Finally, a new paradigm for voltage-free tuning of the interface conductance through mechanical stress will be presented. It will be shown that the underlying mechanism of this effect is the flexoelectric coupling between the switchable electromechanical behavior of the complex oxide materials and their electronic transport properties.
Here are some references:
A.Lipatov, P.Sharma, A.Gruverman, and A.Sinitskii, “Optoelectrical molybdenum disulfide (MoS2) – ferroelectric memories”, ACS Nano 9, 8089-8098 (2015).
H.Lu, A.Lipatov, S.Ryu, D.J.Kim, M.Y.Zhuravlev, C.B.Eom, E.Y.Tsymbal, A.Sinitskii, and A.Gruverman, “Ferroelectric Tunnel Junctions with Graphene Electrodes”, Nat. Comm. 5, 5518 (2014).
H.Lu, C.W.Bark, D. Esque de los Ojos, J.Alcala, C.B.Eom, G.Catalan, and A.Gruverman, “Mechanical Writing of Polarization”, Science 336, 59-61 (2012).
Bio: Dr. Alexei Gruverman is a Charles Bessey Professor at the Department of Physics and Astronomy, University of Nebraska-Lincoln. He received his PhD degree in Solid State Physics from the Ural State University in Ekaterinburg, Russia. His research interests are in the field of scanning probe microscopy of functional materials, electronic phenomena in ferroics, and information storage technologies. Prior to joining UNL in 2007 he held research scientist positions at the Joint Research Center for Atom Technology in Tsukuba, Japan, and at Sony Corporation, Yokohama, Japan, and research professorship position at the North Carolina State University, USA. While working in Japan he has pioneered the SPM-based method for non-destructive high-resolution imaging of ferroelectric domains in thin films and memory devices - an approach now known as Piezoresponse Force Microscopy (PFM). He has co-authored over 160 papers in peer-reviewed international journals (including Science, Nature Materials and Physical Review Letters), which are cited more than 6000 times, a number of book chapters and review articles and has edited three books and several special journal issues on ferroelectricity. He serves as an associate editor for the IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. He is a recipient of the 2004 Ikeda Foundation Award and ISIF 2010 Outstanding Achievement Award and is a Fellow of the American Physical Society. His most important scientific accomplishments along with the development of PFM include development of an experimental approach for testing the fast switching domain dynamics in ferroelectric
memory capacitors and demonstration of the electroresistance effect in ferroelectric tunnel junctions.
The variability of the electronic properties of 2D materials and ferroelectrics offers a wealth of fundamentally important physical phenomena and exciting technological opportunities for the hybrid 2D-FE heterostructures comprising these materials. Among particularly promising aspects of these heterostructures is the electronic transport intricately coupled and enabled by careful control of ferroelectric polarization, which allows realization of non-conventional devices with enhanced functional characteristics.
In this presentation, I will discuss implementation of the hybrid 2D-FE electronic devices that exhibit polarization-controlled non-volatile modulation of the resistive behavior. While many 2D materials can be considered in conjunction with FE materials, this talk primarily focuses on the use of graphene and transition metal dichalcogenide MoS2. Specifically, it will be shown how polarization reversal can modulate (1) the in-plane transport of the interfacial conducting channel in the FE field effect devices, and (2) the perpendicular-to-plane tunneling conductance in the FE tunnel junction devices. The role of the interface engineering in controlling the functional properties of these devices will be discussed as well. Finally, a new paradigm for voltage-free tuning of the interface conductance through mechanical stress will be presented. It will be shown that the underlying mechanism of this effect is the flexoelectric coupling between the switchable electromechanical behavior of the complex oxide materials and their electronic transport properties.
Here are some references:
A.Lipatov, P.Sharma, A.Gruverman, and A.Sinitskii, “Optoelectrical molybdenum disulfide (MoS2) – ferroelectric memories”, ACS Nano 9, 8089-8098 (2015).
H.Lu, A.Lipatov, S.Ryu, D.J.Kim, M.Y.Zhuravlev, C.B.Eom, E.Y.Tsymbal, A.Sinitskii, and A.Gruverman, “Ferroelectric Tunnel Junctions with Graphene Electrodes”, Nat. Comm. 5, 5518 (2014).
H.Lu, C.W.Bark, D. Esque de los Ojos, J.Alcala, C.B.Eom, G.Catalan, and A.Gruverman, “Mechanical Writing of Polarization”, Science 336, 59-61 (2012).
Bio: Dr. Alexei Gruverman is a Charles Bessey Professor at the Department of Physics and Astronomy, University of Nebraska-Lincoln. He received his PhD degree in Solid State Physics from the Ural State University in Ekaterinburg, Russia. His research interests are in the field of scanning probe microscopy of functional materials, electronic phenomena in ferroics, and information storage technologies. Prior to joining UNL in 2007 he held research scientist positions at the Joint Research Center for Atom Technology in Tsukuba, Japan, and at Sony Corporation, Yokohama, Japan, and research professorship position at the North Carolina State University, USA. While working in Japan he has pioneered the SPM-based method for non-destructive high-resolution imaging of ferroelectric domains in thin films and memory devices - an approach now known as Piezoresponse Force Microscopy (PFM). He has co-authored over 160 papers in peer-reviewed international journals (including Science, Nature Materials and Physical Review Letters), which are cited more than 6000 times, a number of book chapters and review articles and has edited three books and several special journal issues on ferroelectricity. He serves as an associate editor for the IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. He is a recipient of the 2004 Ikeda Foundation Award and ISIF 2010 Outstanding Achievement Award and is a Fellow of the American Physical Society. His most important scientific accomplishments along with the development of PFM include development of an experimental approach for testing the fast switching domain dynamics in ferroelectric
memory capacitors and demonstration of the electroresistance effect in ferroelectric tunnel junctions.
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Practical information
- General public
- Free
Organizer
- Prof. Michele Ceriotti
Contact
- Prof. Michele Ceriotti