Exceptional IEL seminar on Low-Power Analog Electronics: CMOS Pixels & Readout Chains for Low Noise Low Power Photonic Sensors
Event details
| Date | 26.02.2021 |
| Hour | 10:00 › 11:00 |
| Speaker |
Dr. Assim Boukhayma is chief scientific officer and board member of Senbiosys SA, Switzerland. He is also a guest scientist at EPFL, Switzerland. He was born in Rabat, Morocco in 1988. He did the preparatory classes for graduate engineering school at Lycee Moulay Youcef, Rabat, Morocco, and was awarded with the French Moroccan cooperation excellence scholarship to pursue engineering studies in France. He received the graduate engineering degree in telecommunications and the M.Sc. in microelectronics and embedded systems architecture from Institut Mines Telecom, Brest, France, in 2012. He was awarded with the graduate research fellowship for doctoral studies from the French atomic energy commission (CEA) and the French ministry of defense (DGA). In 2017, he received the Ph.D. degree from the Swiss Federal Institute of Technology (EPFL), Lausanne, Switzerland, in the subject of Ultra Low Noise CMOS Image Sensors. He received the Springer thesis award in recognition for his outstanding PhD research. In 2018 he co-founded Senbiosys SA Neuchâtel, Switzerland. His work entitled “An ultra-low power PPG and mm-resolution ToF PPD-based CMOS chip towards all-in-one photonic sensors” was awarded best journal paper runner up award in 2020 by the IEEE sensors council. From 2017 to 2020 he worked for the Integrated Circuits Laboratory, EPFL leading the team of CMOS photonic sensors. From 2012 to 2016, he worked with the CEA-LETI, Grenoble, France, in the frame of his Ph.D. research. In 2012, he did his M.Sc. thesis research at CEA-LETI on the design of a low-noise CMOS THz camera. From 2010 to 2011, he worked with Bouygues-Telecom as a Telecommunication Radio Junior Engineer. |
| Location | Online |
| Category | Conferences - Seminars |
Abstract: Imaging and photonic instrumentation systems implement different sensor technologies going from charge coupled devices (CCDs) in light intensity mapping applications to single photon avalanche diodes SPAD or photon multiplication tubes (PMT) for photon counting and time resolved imaging.
During the first decades of digital imaging, CCDs were the device of choice when it came to noise and sensitivity performance while CMOS image sensors occupied the spot of miniaturized and low-cost imaging applications.
The introduction of pinned photodiodes to the CMOS image sensor process (CIS) and the groundbreaking improvements of this process in terms of quantum efficiency, noise, speed, and miniaturization, together with the advantages it offers such as low voltage operation and full integration, ended the show for CCDs in the last decade.
This talk presents a set of techniques that CIS designers can implement to reach the ultimate noise limit on a PPD based CIS readout chain: the deep-sub-electron noise at room temperature. The journey to reach this goal is described, covering aspects related to noise sources and mechanisms in image sensors readout chains as well as design techniques to reduce noise at both ends of the analog readout chain.
This talk shows that ultra-low-noise CIS does not only benefit imaging applications, but also low power active light sensing applications such as Time-of-flight (ToF) for distance ranging and photoplethysmography (PPG) for wearable health monitoring.
During the first decades of digital imaging, CCDs were the device of choice when it came to noise and sensitivity performance while CMOS image sensors occupied the spot of miniaturized and low-cost imaging applications.
The introduction of pinned photodiodes to the CMOS image sensor process (CIS) and the groundbreaking improvements of this process in terms of quantum efficiency, noise, speed, and miniaturization, together with the advantages it offers such as low voltage operation and full integration, ended the show for CCDs in the last decade.
This talk presents a set of techniques that CIS designers can implement to reach the ultimate noise limit on a PPD based CIS readout chain: the deep-sub-electron noise at room temperature. The journey to reach this goal is described, covering aspects related to noise sources and mechanisms in image sensors readout chains as well as design techniques to reduce noise at both ends of the analog readout chain.
This talk shows that ultra-low-noise CIS does not only benefit imaging applications, but also low power active light sensing applications such as Time-of-flight (ToF) for distance ranging and photoplethysmography (PPG) for wearable health monitoring.
Practical information
- General public
- Free
Organizer
- EE Institute
Contact
- Prof. Jean-Philippe Thiran, EE Institute Director ([email protected])